The effect of isomorphic impurities on the elastic conductivity of Dirac structures.

Results of a theoretical study of piezoresistance properties of Dirac structures on example graphene nanoribbons with different types of a conductivity, both ideal and doped with point substitution defects of various concentrations uniformly distributed in the crystal lattice, are presented. Boron and nitrogen atoms are chosen as acceptor and donor impurities respectively. Using the tight-binding method and the Anderson's model, the band structure of the nanoparticles under study is simulated.