Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF/O Gas Mixture.

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from -20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters-the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown.

Setting Plasma Immersion Ion Implantation of Ar Parameters towards Electroforming-Free and Self-Compliance HfO-Based Memristive Structures.

Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar plasma immersion ion implantation (PI) affects the Pt/HfO (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage.

Permeability of the Composite Magnetic Microcapsules Triggered by a Non-Heating Low-Frequency Magnetic Field.

Nanosystems for targeted delivery and remote-controlled release of therapeutic agents has become a top priority in pharmaceutical science and drug development in recent decades. Application of a low frequency magnetic field (LFMF) as an external stimulus opens up opportunities to trigger release of the encapsulated bioactive substances with high locality and penetration ability without heating of biological tissue in vivo. Therefore, the development of novel microencapsulated drug formulations sensitive to LFMF is of paramount importance.