Ferroelectric Devices for Content-Addressable Memory.

In-memory computing is an attractive solution for reducing power consumption and memory access latency cost by performing certain computations directly in memory without reading operands and sending them to arithmetic logic units. Content-addressable memory (CAM) is an ideal way to smooth out the distinction between storage and processing, since each memory cell is a processing unit. CAM compares the search input with a table of stored data and returns the matched data address.

Ion Drift and Polarization in Thin SiO and HfO Layers Inserted in Silicon on Sapphire.

To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO) layers with a thickness of 50-310 nm and HfO layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current-gate voltage curves and a field-induced switching of threshold voltage in the SOS pseudo-MOSFET. For the inserted SiO with a thickness of 310 nm, the transfer transistor characteristics measured in the temperature ranging from 25 to 300 °C demonstrated a triple increase in the hysteresis window with the increasing temperature.

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.

Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The "diode-like" currents through the symmetric atomic layer deposited (ALD) HfO/AlO/HfO… nanolayers with a highest rectification coefficient 10 are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides.

Excitation of localized graphene plasmons by aperiodic self-assembled arrays of metallic antennas.

Infrared (IR) and terahertz plasmons in two-dimensional (2D) materials are commonly excited by metallic or dielectric grating couplers with deep-submicron features fabricated by e-beam lithography. Mass reproduction of such gratings at macroscopic scales is a labor-consuming and expensive technology. Here, we show that localized plasmons in graphene can be generated on macroscopic scales with couplers based on randomly oriented particle-like nanorods (NRs) in close proximity to graphene layer.