Temperature dependence of growth-sector-dependent Raman spectra of boron-doped diamonds synthesized at high-pressure high-temperature.

Single crystals of boron-doped diamond (BDD) were synthesized by the temperature gradient method in high-pressure and high-temperature conditions in the Fe-Al-B-C system, and multisectoral diamond plates were extracted. Temperature-dependent (77-600 K) high-resolution Raman spectroscopic studies have been carried out to investigate the behavior of anharmonic phonon decay in the {001}, {113}, and {111} growth sectors of multisectoral diamond plates with different content of boron impurities (⩽80 ppm) and compare with the data for undoped IIa diamond. Micro-Fourier transform infrared spectroscopy was used to estimate the spatial distribution of uncompensated boron impurityin BDD plates by analyzing boron-related absorption peaks.

Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds.

We demonstrate the potential of using digital stereo micro-photogrammetry for the analysis and modeling of the habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds. A prototype scanning system with a resolution of 5 μm has been implemented based on a digital single-lens reflex camera, making it possible to create highly accurate reproductions of crystal shapes with a minimum size of 4 mm. This method makes it possible to monitor the effect of actual conditions on the physical processes of crystal growth, which is a useful advance for the development of active device elements based on semiconductor diamonds.