1 results match your criteria: "University of Tokyo Tokyo 113-8656 Japan nagashio@material.t.u-tokyo.ac.jp.[Affiliation]"
Experimental verification of SO and S desorption contributing to defect formation in MoS by thermal desorption spectroscopy.
Nanoscale Adv
January 2023
Department of Materials Engineering, University of Tokyo Tokyo 113-8656 Japan
Article Synopsis
- The defect-free surface of MoS is crucial for electronic device applications, with oxidative etching being linked to sulfur vacancy formation, though there's limited experimental evidence on the role of adsorbed oxygen.
- By using thermal desorption spectroscopy, the study shows that sulfur loss is connected to adsorbed oxygen, leading to sulfur vacancy defects as sulfur atoms dissociate from MoS due to oxygen at temperatures between 200 °C and 600 °C.
- Pre-annealing can effectively remove adsorbed oxygen prior to MoS exfoliation, providing a method to prevent these defects.