4 results match your criteria: "UT 84112 [2] Collaborative Innovation Center of Quantum Matter[Affiliation]"

Higher-order topology induced by structural buckling.

Natl Sci Rev

August 2022

Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, USA.

Higher-order topological insulator (HOTI) states, such as two-dimension (2D) HOTI featured with topologically protected corner modes at the intersection of two gapped crystalline boundaries, have attracted much recent interest. However, the physical mechanism underlying the formation of HOTI states is not fully understood, which has hindered our fundamental understanding and discovery of HOTI materials. Here we propose a mechanistic approach to induce higher-order topological phases via structural buckling of 2D topological crystalline insulators (TCIs).

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A Lieb-like lattice in a covalent-organic framework and its Stoner ferromagnetism.

Nat Commun

May 2019

Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.

Lieb lattice has been extensively studied to realize ferromagnetism due to its exotic flat band. However, its material realization has remained elusive; so far only artificial Lieb lattices have been made experimentally. Here, based on first-principles and tight-binding calculations, we discover that a recently synthesized two-dimensional sp carbon-conjugated covalent-organic framework (spc-COF) represents a material realization of a Lieb-like lattice.

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For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap.

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Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface.

Proc Natl Acad Sci U S A

October 2014

Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e.

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