Sb-Doped SnO Nanorods Underlayer Effect to the α-Fe O Nanorods Sheathed with TiO for Enhanced Photoelectrochemical Water Splitting.

Here, a Sb-doped SnO (ATO) nanorod underneath an α-Fe O nanorod sheathed with TiO for photoelectrochemical (PEC) water splitting is reported. The experimental results, corroborated with theoretical analysis, demonstrate that the ATO nanorod underlayer effect on the α-Fe O nanorod sheathed with TiO enhances the PEC water splitting performance. The growth of the well-defined ATO nanorods is reported as a conductive underlayer to improve α-Fe O PEC water oxidation performance.

Band Dependent Interlayer f-Electron Hybridization in CeRhIn_{5}.

A key issue in heavy fermion research is how subtle changes in the hybridization between the 4f (5f) and conduction electrons can result in fundamentally different ground states. CeRhIn_{5} stands out as a particularly notable example: when replacing Rh with either Co or Ir, antiferromagnetism gives way to superconductivity. In this photoemission study of CeRhIn_{5}, we demonstrate that the use of resonant angle-resolved photoemission spectroscopy with polarized light allows us to extract detailed information on the 4f crystal field states and details on the 4f and conduction electron hybridization, which together determine the ground state.

Topological-insulator-based terahertz modulator.

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on BiSbTeSe single crystal, one of the most insulating topological insulators.

Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd.

Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level.

Terahertz conductivity of topological surface states in Bi₁.₅Sb₀.₅Te₁.₈Se₁.₂.

Topological insulators are electronic materials with an insulating bulk and conducting surface. However, due to free carriers in the bulk, the properties of the metallic surface are difficult to detect and characterize in most topological insulator materials. Recently, a new topological insulator Bi₁.

Controllable magnetic doping of the surface state of a topological insulator.

A combined experimental and theoretical study of doping individual Fe atoms into Bi(2)Se(3) is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites.

Raman scattering in current-carrying molecular junctions.

We present a theory for Raman scattering by current-carrying molecular junctions. The approach combines a nonequilibrium Green's function (NEGF) description of the nonequilibrium junction with a generalized scattering theory formulation for evaluating the light scattering signal. This generalizes our previous study [M.

The non-linear response of molecular junctions: the polaron model revisited.

A polaron model proposed as a possible mechanism for non-linear conductance (Galperin et al 2005 Nano Lett. 5 125-30) is revisited with the focus on the differences between the weak and strong molecule-lead coupling cases. Within the one-molecule-level model we present an approximate expression for the electronic Green function corresponding to the inelastic transport case, which in the appropriate limits reduces to expressions presented previously for the isolated molecule and for a molecular junction coupled to a slow vibration (static limit).