1 results match your criteria: "The authors are with the National University of Kaohsiung[Affiliation]"
Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.
IEEE Trans Ultrason Ferroelectr Freq Control
September 2007
The authors are with the National University of Kaohsiung, Department of Chemical and Materials Engineering, Koahsiung, Taiwan.
Article Synopsis
- * Increasing the applied voltage to 8 V results in a remnant polarization of 4.5 microC/cm² and a coercive field of 80 kV/cm, highlighting the material's ferroelectric properties.
- * The research successfully developed a one-transistor-capacitor (1TC) structure for BZ1T9 ferroelectric RAM, utilizing a different type of thin-film transistor for better performance and smaller device size