Threshold reduction and yield improvement of semiconductor nanowire lasers processing-related end-facet optimization.

Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; however, the impact of the transfer process on optoelectronic performance has not been studied. Ultrasound, PDMS-assisted and mechanical rubbing are the most commonly used methods for nanowire transfer; each method may cause changes in the fracture point of the nanowire which can potentially affect both length and end-face mirror quality.