8 results match your criteria: "THz Photonics Creative Research Center[Affiliation]"
Nanotechnology
May 2016
THz Photonics Creative Research Center, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea. School of Advanced Device Technology, University of Science & Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, Korea.
An electrically controllable square-loop metamaterial based on vanadium dioxide (VO2) thin film was proposed in the terahertz frequency regime. The square-loop shaped metamaterial was adopted to perform roles not only as a resonator but also as a micro-heater for the electrical control of the VO2. A dual-resonant square-loop structure was designed to realize band-pass characteristics in the desired frequency band.
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September 2015
THz Photonics Creative Research Center, Future Research Creative Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea.
Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well.
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August 2015
THz Photonics Creative Research Center, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea. School of Advanced Device Technology, University of Science & Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, Korea.
An active terahertz (THz) wave hybrid grating structure of Au/Ti metallic grating on VO2/Al2O3 (0001) was fabricated and evaluated. In our structure, it is shown that the metallic gratings on the VO2 layer strengthen the metallic characteristics to enhance the contrast of the metallic and dielectric phases of a VO2-based device. Especially, the metal grating-induced optical conductivity of the device is greatly enhanced, three times more than that of a metallic phase of bare VO2 films in the 0.
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November 2012
THz Photonics Creative Research Center, ETRI, Daejeon 305-700, South Korea.
Opt Express
July 2012
THz Photonics Creative Research Center, ETRI, Daejeon 305-700, South Korea.
We propose a compact fiber-pigtailed InGaAs photoconductive antenna (FPP) module having an effective heat-dissipation solution as well as a module volume of less than 0.7 cc. The heat-dissipation of the FPP modules when using a heat-conductive printed circuit board (PCB) and an aluminium nitride (AlN) submount, without any cooling systems, improve by 40% and 85%, respectively, when compared with a photoconductive antenna chip on a conventional PCB.
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July 2012
THz Photonics Creative Research Center, ETRI, Daejeon 305-700, South Korea.
A widely tunable dual mode laser diode with a single cavity structure is demonstrated. This novel device consists of a distributed feedback (DFB) laser diode and distributed Bragg reflector (DBR). Micro-heaters are integrated on the top of each section for continuous and independent wavelength tuning of each mode.
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August 2011
THz Photonics Creative Research Center, ETRI, Daejeon 305-700, Korea.
We demonstrate a tunable continuous-wave (CW) terahertz (THz) homodyne system with a novel detuned dual-mode laser diode (DML) and low-temperature-grown (LTG) InGaAs photomixers. The optical beat source with the detuned DML showed a beat frequency tuning range of 0.26 to over 1.
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August 2011
THz Photonics Creative Research Center, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea.
The successful demonstration of an optical fiber-coupled terahertz time-domain spectroscopy (THz-TDS) system is described in this study. The terahertz output power of the emitter with two optical band rejection filters was 132 nW, which is an improvement of 70% over the output power without any filters. This improvement is due to the suppression of an optical modulated signal that is reverse-generated when an alternating current bias exceeding a certain threshold is applied to the emitter.
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