FFL-IDS: A Fog-Enabled Federated Learning-Based Intrusion Detection System to Counter Jamming and Spoofing Attacks for the Industrial Internet of Things.

The Internet of Things (IoT) contains many devices that can compute and communicate, creating large networks. Industrial Internet of Things (IIoT) represents a developed application of IoT, connecting with embedded technologies in production in industrial operational settings to offer sophisticated automation and real-time decisions. Still, IIoT compels significant cybersecurity threats beyond jamming and spoofing, which could ruin the critical infrastructure.

Manipulating Oxygen Vacancies in γ-GaO Nanocrystals: Correlation between Defect Location, Charge State, and Photophysical Properties.

Recent advancements in colloidal synthesis have enabled precise control of extrinsic dopants in semiconductor nanocrystals (NCs), enriching our understanding of dopant-exciton interactions and opening new avenues for controlling NC properties. However, the manipulation of intrinsic defects in colloidal NCs remains challenging. Here, we demonstrate regulation of oxygen vacancy concentration and location in γ-GaO NCs, significantly altering their photoluminescent properties.

Polyoxometalate Cluster-Guided Dynamic Nucleation and Hierarchical Growth of Branched WO Nanofibers with Ultrafine Pt Nanoparticles for Advanced Gas Sensing.

In the food industry, 2,3-butanedione is a significant volatile organic compound valued for its unique aroma and flavor. Real-time detection of its concentration during food preparation is crucial for ensuring optimal taste and food safety. However, accurately detecting low concentrations of 2,3-butanedione requires highly sensitive sensing materials.

Decoupled tin-silver batteries with long cycle life and power output stability based on dendrite-free tin anode and halide insertion cathode chemistry.

Conventional Ag-Zn batteries have historically faced the challenge of poor cycling stability, rooting in issues associated with Ag cathode dissolution and Zn anode dendrites. Herein, we present a pioneering decoupled Sn-Ag cell, which features two chambers separated by a cation-exchange membrane, containing a dendrite-free Sn metal anode immersed in an alkaline anolyte, and an Ag nanowires/carbon nanotube 3D thick-network cathode in a neutral catholyte. Benefiting from the achieved high electroplating/stripping stability of the metallic Sn anode in the alkaline electrolyte and the electrochemical reversibility of the Ag/AgCl cathode redox couple in the neutral electrolyte, the assembled decoupled Sn-Ag cell demonstrates superior cycling stability, retaining 82.

A combined AIMD and DFT study of the low-energy radiation responses of GaN.

Although GaN is a promising candidate for semiconductor devices, degradation of GaN-based device performance may occur when the device is bombarded by high-energy charged particles during its application in aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. Using a combined density functional theory (DFT) and molecular dynamics (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN.

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials.

Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential.

Van der Waals heterostructure gas sensors based on narrow-wide bandgap semiconductors for superior sensitivity.

Achieving high sensitivity in gas sensors is crucial for the precise detection of toxic agents. However, this can be challenging as it requires gas sensors to possess both a high response signal and low electrical noise simultaneously, which seems controversial as it necessitates adopting semiconductors with different bandgaps. Herein, we demonstrate the superior sensitivity of 2D molybdenum disulfide (MoS)/tellurium (Te) van der Waals heterostructure (vdWH) gas sensors fabricated by combining narrow-bandgap (Te) and wide-bandgap (MoS) semiconductors.

Capping-layer-mediated lattice mismatch and redox reaction in SrTiO-based bilayers.

It is well known that the traditional two-dimensional electron system (2DES) hosted by the SrTiOsubstrate can exhibit diverse electronic states by modifying the capping layer in heterostructures. However, such capping layer engineering is less studied in the SrTiO-layer-carried 2DES (or bilayer 2DES), which is different from the traditional one on transport properties but more applicable to the thin-film devices. Here, several SrTiObilayers are fabricated by growing various crystalline and amorphous oxide capping layers on the epitaxial SrTiOlayers.

Atomic Origins of Enhanced Ferroelectricity in Nanocolumnar PbTiO /PbO Composite Thin Films.

Nanocomposite films hold great promise for multifunctional devices by integrating different functionalities within a single film. The microstructure of the precipitate/secondary phase is an essential element in designing composites' properties. The interphase strain between the matrix and secondary phase is responsible for strain-mediated functionalities, such as magnetoelectric coupling and ferroelectricity.

Anomalous Lattice Evolution-Mediated Electrical Properties in Transparent KNN-Based Lead-Free Ferroelectric Films.

The epitaxial (KNaLi)(TaNb)O with 2 wt % MnO addition (KNNLT-M) film on the transparent LaBaSnO-coated LaAlO (001) substrate is chosen to investigate how the lattice evolution, as well as the electrical properties, optical bandgap energy, and thermal stability, changes with the growth oxygen pressure [(O)]. Compared to the other perovskite oxide films, for example, (La,Ca)MnO, PbTiO and BaTiO, an anomalous lattice evolution with an increased (decreased) out-of-plane (in-plane) lattice constant was observed in KNNLT-M films as (O) increases. Such anomalous lattice evolution can improve the electric properties of KNNLT-M films; for example, the ferroelectricity is significantly optimized and the dielectric constant is enhanced from 451 to 1248 at 1 kHz.