38 results match your criteria: "Spintronics Research Center[Affiliation]"

The brain naturally binds events from different sources in unique concepts. It is hypothesized that this process occurs through the transient mutual synchronization of neurons located in different regions of the brain when the stimulus is presented. This mechanism of 'binding through synchronization' can be directly implemented in neural networks composed of coupled oscillators.

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Step-like dependence of memory function on pulse width in spintronics reservoir computing.

Sci Rep

November 2020

National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, 305-8568, Japan.

Physical reservoir computing is a type of recurrent neural network that applies the dynamical response from physical systems to information processing. However, the relation between computation performance and physical parameters/phenomena still remains unclear. This study reports our progress regarding the role of current-dependent magnetic damping in the computational performance of reservoir computing.

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Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone.

Nat Commun

September 2020

Centro de Física de Materiales, CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo.1072, 20080, San Sebastián/Donostia, Basque Country, Spain.

Materials that possess nontrivial topology and magnetism is known to exhibit exotic quantum phenomena such as the quantum anomalous Hall effect. Here, we fabricate a novel magnetic topological heterostructure MnBiTe/BiTe where multiple magnetic layers are inserted into the topmost quintuple layer of the original topological insulator BiTe. A massive Dirac cone (DC) with a gap of 40-75 meV at 16 K is observed.

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It is well known that oscillating magnetization induces charge current in a circuit via Faraday's law of electromagnetic induction. New physical phenomena by which magnetization dynamics can produce charge current have gained considerable interest recently. For example, moving magnetization textures, such as domain walls, generates charge current through the spin-motive force.

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Influence of flicker noise and nonlinearity on the frequency spectrum of spin torque nano-oscillators.

Sci Rep

August 2020

Unité Mixte de Physique CNRS, Thales, Univ. Paris-Sud, Univ. Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France.

Article Synopsis
  • The study focuses on the frequency spectrum of spin torque nano-oscillators, emphasizing the complexity introduced by thermal and flicker noise, which affects long-term stability.
  • Experimental measurements were conducted on spin torque vortex oscillators, analyzing phase noise and spectrum while varying measurement time duration.
  • The research combines theoretical modeling with experimental data to enhance understanding of noise impacts on oscillator stability and provides insights for improving performance in practical applications.
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Voltage-Driven Magnetization Switching Controlled by Microwave Electric Field Pumping.

Nano Lett

August 2020

National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.

We study the dynamic switching properties of a nanomagnet under microwave electric field pumping. The periodic modulation of an anisotropy field induced by microwave electric field pumping efficiently excites the uniform magnetization oscillation, allowing for precise control of magnetization switching. Accurate shaping of the pumping voltage waveform also enables us to investigate the transient reaction of magnetization to the relative phase difference of the pumping signal.

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Insulating antiferromagnets have recently emerged as efficient and robust conductors of spin current. Element-specific and phase-resolved x-ray ferromagnetic resonance has been used to probe the injection and transmission of ac spin current through thin epitaxial NiO(001) layers. The spin current is found to be mediated by coherent evanescent spin waves of GHz frequency, rather than propagating magnons of THz frequency, paving the way towards coherent control of the phase and amplitude of spin currents within an antiferromagnetic insulator at room temperature.

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Electrical manipulation of phenomena generated by nontrivial band topology is essential for the development of next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It has various exotic properties, such as a large anomalous Hall effect (AHE) and chiral anomaly, which are robust owing to the topologically protected Weyl nodes.

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Article Synopsis
  • The text discusses the use of reservoir computing neural networks to test neuromorphic computing hardware, specifically for tasks like automatic speech recognition.
  • It highlights the significance of acoustic transformations that convert sound waves into frequency maps, which can affect how well the neuromorphic hardware performs in recognizing speech.
  • The research quantifies the contributions of both the acoustic transformations and the hardware, demonstrating that the non-linearity in these transformations is crucial for effective feature extraction and that they serve as a benchmark for evaluating different neuromorphic devices.
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Modulation of a microwave signal generated by the spin-torque oscillator (STO) based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies.

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Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane.

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The electron spin degree of freedom can provide the functionality of "nonvolatility" in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power.

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Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy.

ACS Appl Mater Interfaces

December 2018

National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba 305-8568 , Japan.

A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance.

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Heat-driven engines are hard to realize in nanoscale machines because of efficient heat dissipation. However, in the realm of spintronics, heat has been employed successfully-for example, heat current has been converted into a spin current in a NiFe|Pt bilayer system, and Joule heating has enabled selective writing in magnetic memory arrays. Here, we use Joule heating in nanoscale magnetic tunnel junctions to create a giant spin torque due to a magnetic anisotropy change.

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Vowel recognition with four coupled spin-torque nano-oscillators.

Nature

November 2018

Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau, France.

In recent years, artificial neural networks have become the flagship algorithm of artificial intelligence. In these systems, neuron activation functions are static, and computing is achieved through standard arithmetic operations. By contrast, a prominent branch of neuroinspired computing embraces the dynamical nature of the brain and proposes to endow each component of a neural network with dynamical functionality, such as oscillations, and to rely on emergent physical phenomena, such as synchronization, for solving complex problems with small networks.

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Article Synopsis
  • Synchronized nonlinear oscillator networks are essential for applications like phased array wave generators and neuromorphic systems, with stable synchronization being a major challenge.
  • This study experimentally shows that it is possible to scale synchronized spin-torque oscillator networks up to eight oscillators, resulting in increased emitted power and quality factor.
  • The synchronization stability achieved lasts over 1.6 milliseconds, equivalent to 10 oscillation periods, indicating that spin-torque oscillators are promising for future applications in synchronized networks.
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This work presents a vector network analyzer ferromagnetic resonance (VNA-FMR) spectrometer with field differential detection. This technique differentiates the S-parameter by applying a small binary modulation field in addition to the DC bias field to the sample. By setting the modulation frequency sufficiently high, slow sensitivity fluctuations of the VNA, i.

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Neural-like computing with populations of superparamagnetic basis functions.

Nat Commun

April 2018

Centre de Nanosciences et de Nanotechnologies, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France.

Article Synopsis
  • - The text discusses how population coding theory in neuroscience can enhance fault-tolerant information processing, which could be applied to improve computing using small, imperfect devices.
  • - It highlights the limitations of traditional CMOS technology in terms of area and energy needs, suggesting nanoscale magnetic tunnel junctions as a more efficient alternative.
  • - Experimental results show that a setup of nine junctions can effectively achieve complex tasks like generating cursive letters, paving the way for hybrid systems that can learn and perform resilient computations with lower resource consumption.
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Effect of MgO Underlying Layer on the Growth of GaO Tunnel Barrier in Epitaxial Fe/GaO/(MgO)/Fe Magnetic Tunnel Junction Structure.

Sensors (Basel)

October 2017

National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan.

We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaO tunnel barrier in Fe/GaO/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C under an O₂ atmosphere. This annealing was performed after the deposition of the GaO on the Fe(001) bottom electrode with or without the MgO(001) underlying layer.

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Neuromorphic computing with nanoscale spintronic oscillators.

Nature

July 2017

Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.

Article Synopsis
  • Neurons in the brain function as nonlinear oscillators for processing information, inspiring advances in neuromorphic computing, which aims to replicate this behavior using nanoscale oscillators.
  • Creating a chip with 10 oscillators in a small area requires each oscillator to be under one micrometer, but nanoscale devices face challenges like noise and instability that hinder reliable data processing.
  • A successful experiment demonstrated that a nanoscale spintronic oscillator can recognize spoken digits with accuracy comparable to advanced neural networks, suggesting a new path for efficient, low-power on-chip computations.
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Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO. In this study, we shed light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC.

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Voltage controlled interfacial magnetism through platinum orbits.

Nat Commun

June 2017

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan.

Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation in a metal-dielectric interface in which the electric field is atomically inhomogeneous because of the strong electrostatic screening effect in metals. Such electric fields enable us to access electric quadrupoles of the electron shell.

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The concept of spin-torque-driven high-frequency magnetization dynamics, allows the potential construction of complex networks of non-linear dynamical nanoscale systems, combining the field of spintronics and the study of non-linear systems. In the few previous demonstrations of synchronization of several spin-torque oscillators, the short-range nature of the magnetic coupling that was used has largely hampered a complete control of the synchronization process. Here we demonstrate the successful mutual synchronization of two spin-torque oscillators with a large separation distance through their long range self-emitted microwave currents.

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We propose an experimental scheme to determine the spin-transfer torque efficiency excited by the spin-orbit interaction in ferromagnetic bilayers from the measurement of the longitudinal magnetoresistace. Solving a diffusive spin-transport theory with appropriate boundary conditions gives an analytical formula of the longitudinal charge current density. The longitudinal charge current has a term that is proportional to the square of the spin-transfer torque efficiency and that also depends on the ratio of the film thickness to the spin diffusion length of the ferromagnet.

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