38 results match your criteria: "Spintronics Research Center[Affiliation]"
Nat Commun
February 2022
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
The brain naturally binds events from different sources in unique concepts. It is hypothesized that this process occurs through the transient mutual synchronization of neurons located in different regions of the brain when the stimulus is presented. This mechanism of 'binding through synchronization' can be directly implemented in neural networks composed of coupled oscillators.
View Article and Find Full Text PDFRev Sci Instrum
June 2021
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568, Japan.
Sci Rep
November 2020
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, 305-8568, Japan.
Physical reservoir computing is a type of recurrent neural network that applies the dynamical response from physical systems to information processing. However, the relation between computation performance and physical parameters/phenomena still remains unclear. This study reports our progress regarding the role of current-dependent magnetic damping in the computational performance of reservoir computing.
View Article and Find Full Text PDFNat Commun
September 2020
Centro de Física de Materiales, CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo.1072, 20080, San Sebastián/Donostia, Basque Country, Spain.
Materials that possess nontrivial topology and magnetism is known to exhibit exotic quantum phenomena such as the quantum anomalous Hall effect. Here, we fabricate a novel magnetic topological heterostructure MnBiTe/BiTe where multiple magnetic layers are inserted into the topmost quintuple layer of the original topological insulator BiTe. A massive Dirac cone (DC) with a gap of 40-75 meV at 16 K is observed.
View Article and Find Full Text PDFSci Adv
August 2020
Solid State Devices Group, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.
It is well known that oscillating magnetization induces charge current in a circuit via Faraday's law of electromagnetic induction. New physical phenomena by which magnetization dynamics can produce charge current have gained considerable interest recently. For example, moving magnetization textures, such as domain walls, generates charge current through the spin-motive force.
View Article and Find Full Text PDFSci Rep
August 2020
Unité Mixte de Physique CNRS, Thales, Univ. Paris-Sud, Univ. Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France.
Nano Lett
August 2020
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
We study the dynamic switching properties of a nanomagnet under microwave electric field pumping. The periodic modulation of an anisotropy field induced by microwave electric field pumping efficiently excites the uniform magnetization oscillation, allowing for precise control of magnetization switching. Accurate shaping of the pumping voltage waveform also enables us to investigate the transient reaction of magnetization to the relative phase difference of the pumping signal.
View Article and Find Full Text PDFPhys Rev Lett
May 2020
Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter, Devon EX4 4QL, United Kingdom.
Insulating antiferromagnets have recently emerged as efficient and robust conductors of spin current. Element-specific and phase-resolved x-ray ferromagnetic resonance has been used to probe the injection and transmission of ac spin current through thin epitaxial NiO(001) layers. The spin current is found to be mediated by coherent evanescent spin waves of GHz frequency, rather than propagating magnons of THz frequency, paving the way towards coherent control of the phase and amplitude of spin currents within an antiferromagnetic insulator at room temperature.
View Article and Find Full Text PDFNature
April 2020
Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.
Electrical manipulation of phenomena generated by nontrivial band topology is essential for the development of next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It has various exotic properties, such as a large anomalous Hall effect (AHE) and chiral anomaly, which are robust owing to the topologically protected Weyl nodes.
View Article and Find Full Text PDFSci Rep
January 2020
Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France.
Sci Rep
December 2019
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, 305-8568, Japan.
Modulation of a microwave signal generated by the spin-torque oscillator (STO) based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies.
View Article and Find Full Text PDFSci Rep
July 2019
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany.
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane.
View Article and Find Full Text PDFMicromachines (Basel)
May 2019
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.
The electron spin degree of freedom can provide the functionality of "nonvolatility" in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2018
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba 305-8568 , Japan.
A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance.
View Article and Find Full Text PDFNat Nanotechnol
January 2019
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan.
Heat-driven engines are hard to realize in nanoscale machines because of efficient heat dissipation. However, in the realm of spintronics, heat has been employed successfully-for example, heat current has been converted into a spin current in a NiFe|Pt bilayer system, and Joule heating has enabled selective writing in magnetic memory arrays. Here, we use Joule heating in nanoscale magnetic tunnel junctions to create a giant spin torque due to a magnetic anisotropy change.
View Article and Find Full Text PDFNature
November 2018
Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau, France.
In recent years, artificial neural networks have become the flagship algorithm of artificial intelligence. In these systems, neuron activation functions are static, and computing is achieved through standard arithmetic operations. By contrast, a prominent branch of neuroinspired computing embraces the dynamical nature of the brain and proposes to endow each component of a neural network with dynamical functionality, such as oscillations, and to rely on emergent physical phenomena, such as synchronization, for solving complex problems with small networks.
View Article and Find Full Text PDFSci Rep
September 2018
Spintronics Research Center, National Institute of Advanced Industrial Science And Technology (AIST), Tsukuba, 305-8568, Japan.
Rev Sci Instrum
May 2018
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
This work presents a vector network analyzer ferromagnetic resonance (VNA-FMR) spectrometer with field differential detection. This technique differentiates the S-parameter by applying a small binary modulation field in addition to the DC bias field to the sample. By setting the modulation frequency sufficiently high, slow sensitivity fluctuations of the VNA, i.
View Article and Find Full Text PDFNat Commun
April 2018
Centre de Nanosciences et de Nanotechnologies, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France.
Sensors (Basel)
October 2017
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan.
We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaO tunnel barrier in Fe/GaO/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C under an O₂ atmosphere. This annealing was performed after the deposition of the GaO on the Fe(001) bottom electrode with or without the MgO(001) underlying layer.
View Article and Find Full Text PDFNature
July 2017
Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.
Sci Rep
July 2017
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki, 305-8568, Japan.
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO. In this study, we shed light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC.
View Article and Find Full Text PDFNat Commun
June 2017
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan.
Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation in a metal-dielectric interface in which the electric field is atomically inhomogeneous because of the strong electrostatic screening effect in metals. Such electric fields enable us to access electric quadrupoles of the electron shell.
View Article and Find Full Text PDFNat Commun
June 2017
Unité Mixte de Physique CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau 91767, France.
The concept of spin-torque-driven high-frequency magnetization dynamics, allows the potential construction of complex networks of non-linear dynamical nanoscale systems, combining the field of spintronics and the study of non-linear systems. In the few previous demonstrations of synchronization of several spin-torque oscillators, the short-range nature of the magnetic coupling that was used has largely hampered a complete control of the synchronization process. Here we demonstrate the successful mutual synchronization of two spin-torque oscillators with a large separation distance through their long range self-emitted microwave currents.
View Article and Find Full Text PDFProc SPIE Int Soc Opt Eng
November 2016
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6202, USA.
We propose an experimental scheme to determine the spin-transfer torque efficiency excited by the spin-orbit interaction in ferromagnetic bilayers from the measurement of the longitudinal magnetoresistace. Solving a diffusive spin-transport theory with appropriate boundary conditions gives an analytical formula of the longitudinal charge current density. The longitudinal charge current has a term that is proportional to the square of the spin-transfer torque efficiency and that also depends on the ratio of the film thickness to the spin diffusion length of the ferromagnet.
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