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Reply to the 'Comment on "Design and circuit simulation of nanoscale vacuum channel transistors"' by R. Forbes, , 2020, , DOI: 10.1039/D0NA00687D.

Nanoscale Adv

February 2021

Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University Nanjing 210096 China

Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof.

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