1 results match your criteria: "Shenzhen University Shenzhen Guangdong 518060 China kmgu@szu.edu.cn liyu@szu.edu.cn.[Affiliation]"
HfS/MoTe vdW heterostructure: bandstructure and strain engineering based on first-principles calculation.
RSC Adv
January 2020
Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
In this study, a multilayered van der Waals (vdW) heterostructure, HfS/MoTe, was modeled and simulated using density functional theory (DFT). It was found that the multilayers (up to 7 layers) are typical indirect bandgap semiconductors with an indirect band gap varying from 0.35 eV to 0.
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