A fixed support method for cryogenic silicon cavities of ultra-stable lasers for space applications.

In this paper, a fixed support method for a cryogenic monocrystalline silicon Fabry-Pérot cavity of an ultra-stable laser for space applications is proposed. Through finite element analysis, the vibration sensitivity at the center of the cavity is below 10E-12/g; the fundamental frequency is 381 Hz; the thermal deformation is compensated by applying a preload force of about 3 N*m for a variation of 300 K to 124 K. Based on these analyses, an equal-mass cavity simulator was machined and mounted.

Decoding protein binding landscape on circular RNAs with base-resolution transformer models.

Circular RNAs (circRNAs), a class of endogenous RNA with a covalent loop structure, can regulate gene expression by serving as sponges for microRNAs and RNA-binding proteins (RBPs). To date, most computational methods for predicting RBP binding sites on circRNAs focus on circRNA fragments instead of circRNAs. These methods detect whether a circRNA fragment contains binding sites, but cannot determine where are the binding sites and how many binding sites are on the circRNA transcript.

Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications.

The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe/FeGeTe heterostructures.

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives.

The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations.

Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBiTe.

Terahertz photodetectors based on emergent intrinsic magnetic topological insulators promise excellent performance in terms of highly sensitive, anisotropic and room-temperature ability benefiting from their extraordinary material properties. Here, we propose and conceive the response features of exfoliated MnBiTe flakes as active materials for terahertz detectors. The MnBiTe-based photodetectors show the sensitivity rival with commercially available ones, and the noise equivalent power of 13 pW/Hz under 0.

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition.

Fabrication of 1D Te/2D ReS Mixed-Dimensional van der Waals Heterojunction for High-Performance Phototransistor.

The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide (ReS) makes it suitable for nanoelectronic and optoelectronic applications. However, the internal defects coupled with with the low mobility and light-absorbing capability of ReS impede its utilization in high-performance photodetectors. Fabrication of mixed-dimensional heterojunctions is an alternative method for designing high-performance hybrid photodetectors.

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light.

A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures.

Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature.

Next-generation polarized mid-infrared imaging systems generally requires miniaturization, integration, flexibility, good workability at room temperature and in severe environments, etc. Emerging two-dimensional materials provide another route to meet these demands, due to the ease of integrating on complex structures, their native in-plane anisotropy crystal structure for high polarization photosensitivity, and strong quantum confinement for excellent photodetecting performances at room temperature. However, polarized infrared imaging under scattering based on 2D materials has yet to be realized.

Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices.

Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is proposed to overcome these limitations by exploring the photothermoelectric (PTE) effect in an ultrashort (down to 30 nm) channel with black phosphorus as a photoactive material. The preferential flow of hot carriers is enabled by the asymmetric Cr/Au and Ti/Au metallization with the titled-angle evaporation technique.

Light-Driven WSe-ZnO Junction Field-Effect Transistors for High-Performance Photodetection.

Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap-assisted gain () mechanism. However, the high-gain photodetectors benefitting from long carrier lifetime often possess slow response time () due to the inherent - tradeoff. Here, a light-driven junction field-effect transistor (LJFET), consisting of an n-type ZnO belt as the channel material and a p-type WSe nanosheet as a photoactive gate material, to break the - tradeoff through decoupling the gain from carrier lifetime is reported.

Discovering nuclear targeting signal sequence through protein language learning and multivariate analysis.

Nuclear localization signals (NLSs) are peptides that target proteins to the nucleus by binding to carrier proteins in the cytoplasm that transport their cargo across the nuclear membrane. Accurate identification of NLSs can help elucidate the functions of nuclear protein complexes. The currently known NLS predictors are usually specific to certain species or largely dependent on prior knowledge of NLS basic residues.

Time-Tailoring van der Waals Heterostructures for Human Memory System Programming.

The human memory system plays an indispensable role in oblivion, learning, and memorization. Implementing a memory system within electronic devices contributes an important step toward constructing a neuromorphic system that emulates advanced mental functions of the human brain. Given the complex time-tailoring requirement, integrating a human memory system into one system is a great challenge.

Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 µm.

Broadening the spectral range of photodetectors is an essential topic in photonics. Traditional photodetectors are widely used; however, the realization of ultrabroad spectrum photodetectors remains a challenge. Here, a photodetector constructed by a hybrid quasi-freestanding structure of organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with molybdenum disulfide (MoS) is demonstrated.

Anisotropic Plasmonic Metal Heterostructures as Theranostic Nanosystems for Near Infrared Light-Activated Fluorescence Amplification and Phototherapy.

The development of sophisticated theranostic systems for simultaneous near infrared (NIR) fluorescence imaging and phototherapy is of particular interest. Herein, anisotropic plasmonic metal heterostructures, Pt end-deposited Au nanorods (PEA NRs), are developed to efficiently produce hot electrons under 808 nm laser irradiation, exhibiting the strong electric density. These hot electrons can release the heat through electron-phonon relaxation and form reactive oxygen species through chemical transformation, as a result of potent photothermal and photodynamic performance.

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne.

Semiconducting single-walled carbon nanotubes (s-SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s-SWNTs seriously impedes the development of s-SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s-SWNTs and γ-graphdiyne.

Photogating in Low Dimensional Photodetectors.

Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states.

Side-Gated InO Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

is demonstrated. The design of the side-gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side-gate geometries.

PbZr0.4Ti0.6O3 and Ba0.9Sr0.1TiO3 reflectors derived from chemical solutions containing polymers.

Ba(0.9)Sr(0.1)TiO3 (BST)-based and PbZr(0.