58 results match your criteria: "Shanghai Institute of Micro-System and Information Technology[Affiliation]"
J Nanosci Nanotechnol
February 2013
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
The application of three-step Epitaxial (EPI) process to dual trench epitaxial diode array for high density phase change random access memory (PCRAM) was reported in this paper. With three-step EPI process condition, both vertical and lateral Arsenic auto-doping were suppressed effectively from Arsenic heavily-doped substrate. It was found that EPI layer (- 300 nm) with high-quality single crystalline and good thickness uniformity within 200 mm diameter wafer could be achieved.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
February 2013
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Non-isothermal change in electrical resistance was used to investigate the crystallization process of GaSb-Sb2Te3 pseudobinary films prepared by co-sputtering using GaSb and Sb2Te3 targets. The crystallization parameters were determined directly by in-situ electrical resistance-temperature measurements. The activation energy of crystallization and rate factor were deduced from the Kissinger's plot.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
October 2012
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
In this work, a high density phase-change memory (PCM) array with advanced side bottom-electrode-contact (BEC) scheme, which is highly compatible with current complementary metal oxide semiconductor technology, has been proposed. The data storage capacity has been doubled than orthodoxy PCM structure and the contact area between bottom electrode and PCM cell shrinks from 20096 nm2 to 600 nm2. The optimized titanium nitride (TiN) film as side BEC is 10 nm due to trading off between RESET current and SET resistance.
View Article and Find Full Text PDFNanoscale Res Lett
February 2013
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.
A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material.
View Article and Find Full Text PDFNanotechnology
April 2011
State Key Laboratory of Functional Materials for Informatics, Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Si-Sb-Te materials including Te-rich Si₂Sb₂Te₆ and Si(x)Sb₂Te₃ with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si(x)Sb₂Te₃ shows better thermal stability than Ge₂Sb₂Te₅ or Si₂Sb₂Te₆ in that Si(x)Sb₂Te₃ does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si(x)Sb₂Te₃ improves.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
February 2009
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
A method to prepare nano-composite phase change material was proposed and demonstrated by oxygen doping into Si2Sb2Te5 material. According to transmission electron microscope images, Si-Sb-Te-rich domains are separated from each other by SiOx-rich domains within the material. A proper dose of O-doping into Si2Sb2Te5 significantly reduces the grain size of the phase change material.
View Article and Find Full Text PDFNanotechnology
November 2008
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline tungsten trioxide heating layer promotes the temperature rise in the Ge(2)Sb(2)Te(5) layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. Theoretical thermal simulation and calculation for the reset process are applied to understand the thermal effect of the tungsten trioxide heating layer/electrode.
View Article and Find Full Text PDFSensors (Basel)
August 2008
Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China.
This paper presents a new algorithm making use of kurtosis, which is a statistical parameter, to distinguish the seismic signal generated by a person's footsteps from other signals. It is adaptive to any environment and needs no machine study or training. As persons or other targets moving on the ground generate continuous signals in the form of seismic waves, we can separate different targets based on the seismic waves they generate.
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