Reconfigurable carrier type and photodetection of MoTe of various thicknesses by deep ultraviolet light illumination.

Tuning of the Fermi level in transition metal dichalcogenides (TMDCs) leads to devices with excellent electrical and optical properties. In this study, we controlled the Fermi level of MoTe by deep ultraviolet (DUV) light illumination in different gaseous environments. Specifically, we investigated the reconfigurable carrier type of an intrinsic p-MoTe flake that gradually transformed into n-MoTe after illumination with DUV light for 30, 60, 90, 120, 160, 250, 500, 900, and 1200 s in a nitrogen (N) gas environment.

Observation of giant spin-orbit interaction in graphene and heavy metal heterostructures.

Graphene is a promising material demonstrating some interesting phenomena such as the spin Hall effect, bipolar transistor effect, and non-trivial topological states. However, graphene has an intrinsically small spin-orbit interaction (SOI), making it difficult to apply in spintronic devices. The electronic band structure of graphene makes it possible to develop a systematic method to enhance SOI extrinsically.