3 results match your criteria: "Russia and Skolkovo Institute of Science and Technology[Affiliation]"

Memory devices based on novel alkyl viologen halobismuthate(iii) complexes.

Chem Commun (Camb)

August 2020

Institute for Problems of Chemical Physics RAS, Semenov Prospect 1, Chernogolovka, 142432, Russia and Skolkovo Institute of Science and Technology, Nobel St. 3, Moscow, 143026, Russia.

Four novel halobismuthate(iii) complexes with alkyl viologen cations: (R2Viol)2[Bi2X10] (R = n-butyl, n-pentyl, X = Cl, Br) have been synthesized. Both chloride complexes revealed photochromic behavior and were successfully utilized for the fabrication of OFET-based memory devices with high switching coefficients and good write-read-erase cycling stability.

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Super-oxidation of silicon nanoclusters: magnetism and reactive oxygen species at the surface.

Nanoscale

November 2016

Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia and Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobel St. 3, Moscow 143026, Russia and Department of Geosciences and Center for Materials by Design, Stony Brook University, Stony Brook, NY 11794, USA and Northwestern Polytechnical University, Xi'an, Shaanxi 720072, PR China.

Oxidation of silicon nanoclusters depending on the temperature and oxygen pressure is explored from first principles using the evolutionary algorithm, and structural and thermodynamic analysis. From our calculations of 90 SiO clusters we found that under normal conditions oxidation does not stop at the stoichiometric SiO composition, as it does in bulk silicon, but goes further placing extra oxygen atoms on the cluster surface. These extra atoms are responsible for light emission, relevant to reactive oxygen species and many of them are magnetic.

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Density of states in a two-dimensional chiral metal with vacancies.

Phys Rev Lett

October 2014

L. D. Landau Institute for Theoretical Physics RAS, 119334 Moscow, Russia and Moscow Institute of Physics and Technology, 141700 Moscow, Russia and Skolkovo Institute of Science and Technology, 143025 Skolkovo, Russia.

We study quantum interference effects in a two-dimensional chiral metal (bipartite lattice) with vacancies. We demonstrate that randomly distributed vacancies constitute a peculiar type of chiral disorder leading to strong modifications of critical properties at zero energy as compared to those of conventional chiral metals. In particular, the average density of states diverges as ρ∝E(-1)|lnE|(-3/2) and the correlation length L(c)∝√[|lnE|] in the limit E→0.

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