The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials.

Polycrystalline optoelectronic materials are widely used for photoelectric signal conversion and energy harvesting and play an irreplaceable role in the semiconductor field. As an important factor in determining the optoelectronic properties of polycrystalline materials, grain boundaries (GBs) are the focus of research. Particular emphases are placed on the generation and height of GB barriers, how carriers move at GBs, whether GBs act as carrier transport channels or recombination sites, and how to change the device performance by altering the electrical behaviors of GBs.

Instability and entanglement of the ground state of the Dicke model.

Using tools of quantum information theory we show that the ground state of the Dicke model exhibits an infinite sequence of instabilities (quantum-phase-like transitions). These transitions are characterized by abrupt changes of the bi-partite entanglement between atoms at critical values kappa(j) of the atom-field coupling parameter kappa and are accompanied by discontinuities of the first derivative of the energy of the ground state. We show that in a weak-coupling limit (kappa1 < or = kappa < or = kappa2) the Coffman-Kundu-Wootters inequalities are saturated, which proves that for these values of the coupling no intrinsic multipartite entanglement (neither among the atoms nor between the atoms and the field) is generated by the atom-field interaction.