1 results match your criteria: "Purdue University West Lafayette Indiana 47907-2045 USA hwang00@purdue.edu.[Affiliation]"
Tuning magnetic anisotropy in Co-BaZrO vertically aligned nanocomposites for memory device integration.
Nanoscale Adv
November 2019
School of Electrical and Computer Engineering, Purdue University West Lafayette Indiana 47907-2045 USA
Article Synopsis
- Ferromagnetic nanostructures with strong anisotropic properties are crucial for developing advanced spintronic devices, while existing candidates often face limitations in patterning and thickness.
- New Co-BaZrO (Co-BZO) vertically aligned nanocomposite (VAN) films have been created, offering tunable magnetic anisotropy and coercive field strength by adjusting the thickness and aspect ratio of Co nanostructures.
- The integration of Co-BZO VANs into tunnel junction devices showed promising resistive switching, highlighting their potential for future spintronic applications.