Ion Migration and Redox Reactions in Axial Heterojunction Perovskite CsPb(BrCl) Nanowire Devices Revealed by Operando Nanofocused X-ray Photoelectron Spectroscopy.

Metal-halide perovskites (MHPs) have gained substantial interest in the energy and optoelectronics field. MHPs in nanostructure forms, such as nanocrystals and nanowires (NWs), have further expanded the horizons for perovskite nanodevices in geometry and properties. A partial anion exchange within the nanostructure, creating axial heterojunctions, has significantly augmented the potential applications.

Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces.

Exsolution reactions enable the synthesis of oxide-supported metal nanoparticles, which are desirable as catalysts in green energy conversion technologies. It is crucial to precisely tailor the nanoparticle characteristics to optimize the catalysts' functionality, and to maintain the catalytic performance under operation conditions. We use chemical (co)-doping to modify the defect chemistry of exsolution-active perovskite oxides and examine its influence on the mass transfer kinetics of Ni dopants towards the oxide surface and on the subsequent coalescence behavior of the exsolved nanoparticles during a continuous thermal reduction treatment.

Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current.

Self-rectifying memristive devices have emerged as promising contenders for low-power in-memory computing, presenting numerous advantages. However, characterizing the functional behavior of passive crossbar arrays incorporating these devices remains challenging due to sophisticated parasitic currents stemming from rich memristive dynamic behavior. Conventional methods using read margin assessments to evaluate functional behavior in passive crossbars are hindered by the voltage divider effect from the pull-up resistor.

Quantum size effects in ultra-thin YBaCuO films.

The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBaCuO (YBCO) films by measuring the electrical transport properties of nanowires aligned at different angles relative to the main crystallographic axes. The anisotropy of the nanowire critical current in the nodal and antinodal directions reduces with the decrease in the film thickness.

Role of strain softening and viscoelastic memory for the rolling friction of two tire tread compounds.

Rolling friction is of great importance for many applications, such as tires and conveyor belts. We study the rolling friction for hard cylinders rolling on flat rubber sheets. The rolling friction depends on the number of rolling cycles, the rolling speed, and the temperature.

Impedance-matched coplanar-waveguide metal-powder low-pass filters for cryogenic applications.

We developed impedance-matched metal-powder low-pass filters based on coplanar waveguide design and characterized them at room temperature and 77.4 K. The coplanar waveguide metal-powder (CPW-MP) filters have a return loss better than 9.

Room Temperature Lattice Thermal Conductivity of GeSn Alloys.

CMOS-compatible materials for efficient energy harvesters at temperatures characteristic for on-chip operation and body temperature are the key ingredients for sustainable green computing and ultralow power Internet of Things applications. In this context, the lattice thermal conductivity (κ) of new group IV semiconductors, namely GeSn alloys, are investigated. Layers featuring Sn contents up to 14 at.

In-Plane Anisotropy of Electrical Transport in YTbBaCuO Films.

We fabricated high-quality c-axis-oriented epitaxial YBaCuO films with 15% of the yttrium atoms replaced by terbium (YTBCO) and studied their electrical properties. The Tb substitution reduced the charge carrier density, resulting in increased resistivity and decreased critical current density compared to pure YBaCuO films. The electrical properties of the YTBCO films showed an in-plane anisotropy in both the superconducting and normal states that, together with the XRD data, provided evidence for, at least, a partially twin-free film.

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices.

Write-variability and resistance instability are major reliability concerns impeding implementation of oxide-based memristive devices in neuromorphic systems. The root cause of the reliability issues is the stochastic nature of conductive filament formation and dissolution, whose impact is particularly critical in the high resistive state (HRS). Optimizing the filament stability requires mitigating diffusive processes within the oxide, but these are unaffected by conventional electrode scaling.

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO Devices.

The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal-oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e.

Space charge governs the kinetics of metal exsolution.

Nanostructured composite electrode materials play a major role in the fields of catalysis and electrochemistry. The self-assembly of metallic nanoparticles on oxide supports via metal exsolution relies on the transport of reducible dopants towards the perovskite surface to provide accessible catalytic centres at the solid-gas interface. At surfaces and interfaces, however, strong electrostatic gradients and space charges typically control the properties of oxides.

Topological magnons driven by the Dzyaloshinskii-Moriya interaction in the centrosymmetric ferromagnet MnGe.

The phase of the quantum-mechanical wave function can encode a topological structure with wide-ranging physical consequences, such as anomalous transport effects and the existence of edge states robust against perturbations. While this has been exhaustively demonstrated for electrons, properties associated with the elementary quasiparticles in magnetic materials are still underexplored. Here, we show theoretically and via inelastic neutron scattering experiments that the bulk ferromagnet MnGe hosts gapped topological Dirac magnons.

Stripe-Like hBN Monolayer Template for Self-Assembly and Alignment of Pentacene Molecules.

Metallic surfaces with unidirectional anisotropy are often used to guide the self-assembly of organic molecules along a particular direction. Such supports thus offer an avenue for the fabrication of hybrid organic-metal interfaces with tailored morphology and precise elemental composition. Nonetheless, such control often comes at the expense of detrimental interfacial interactions that might quench the pristine properties of molecules.

Incommensurate magnetic structure of CrAs at low temperatures and high pressures.

The magnetic structure of chromium arsenide CrAs is studied with neutron powder diffraction at ambient pressure in the temperature range 1.5-300 K as well as with neutron single-crystal diffraction at 2 K and 0.12 GPa.

Microwave synthesis of molybdenene from MoS.

Dirac materials are characterized by the emergence of massless quasiparticles in their low-energy excitation spectrum that obey the Dirac Hamiltonian. Known examples of Dirac materials are topological insulators, d-wave superconductors, graphene, and Weyl and Dirac semimetals, representing a striking range of fundamental properties with potential disruptive applications. However, none of the Dirac materials identified so far shows metallic character.

Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges.

Artificial neurons and synapses are considered essential for the progress of the future brain-inspired computing, based on beyond von Neumann architectures. Here, a discussion on the common electrochemical fundamentals of biological and artificial cells is provided, focusing on their similarities with the redox-based memristive devices. The driving forces behind the functionalities and the ways to control them by an electrochemical-materials approach are presented.

Particle-hole symmetry protects spin-valley blockade in graphene quantum dots.

Particle-hole symmetry plays an important role in the characterization of topological phases in solid-state systems. It is found, for example, in free-fermion systems at half filling and it is closely related to the notion of antiparticles in relativistic field theories. In the low-energy limit, graphene is a prime example of a gapless particle-hole symmetric system described by an effective Dirac equation in which topological phases can be understood by studying ways to open a gap by preserving (or breaking) symmetries.

Coherent noise enables probabilistic sequence replay in spiking neuronal networks.

Animals rely on different decision strategies when faced with ambiguous or uncertain cues. Depending on the context, decisions may be biased towards events that were most frequently experienced in the past, or be more explorative. A particular type of decision making central to cognition is sequential memory recall in response to ambiguous cues.

Review on Resistive Switching Devices Based on Multiferroic BiFeO.

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.

SET Kinetics of Ag/HfO-Based Diffusive Memristors under Various Counter-Electrode Materials.

The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of the CE material towards reduction-oxidation reactions, which determines the metal ion concentration in the electrolyte and ultimately impacts the switching kinetics. In this study, the focus is laid on Pt, TiN, and W, which are relevant in standard chip technology.

Phonon-mediated room-temperature quantum Hall transport in graphene.

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering.

Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices.

Memristive devices relying on redox-based resistive switching mechanisms represent promising candidates for the development of novel computing paradigms beyond von Neumann architecture. Recent advancements in understanding physicochemical phenomena underlying resistive switching have shed new light on the importance of an appropriate selection of material properties required to optimize the performance of devices. However, despite great attention has been devoted to unveiling the role of doping concentration, impurity type, adsorbed moisture, and catalytic activity at the interfaces, specific studies concerning the effect of the counter electrode in regulating the electronic flow in memristive cells are scarce.

Atomically resolved electronic properties in single layer graphene on α-AlO (0001) by chemical vapor deposition.

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.

Learning and replaying spatiotemporal sequences: A replication study.

Learning and replaying spatiotemporal sequences are fundamental computations performed by the brain and specifically the neocortex. These features are critical for a wide variety of cognitive functions, including sensory perception and the execution of motor and language skills. Although several computational models demonstrate this capability, many are either hard to reconcile with biological findings or have limited functionality.