2 results match your criteria: "People's Republic of China. Ningbo Institute of Material Technology and Engineering[Affiliation]"
Thickness-modulated passivation properties of PEDOT:PSS layers over crystalline silicon wafers in back junction organic/silicon solar cells.
Nanotechnology
May 2019
Department of Physics, Nanchang University, Nanchang, 330031, People's Republic of China. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
PSS/silicon heterojunction solar cell has recently attracted much attention due to the fact that it can be simply and cost-effectively fabricated. It is crucial to suppress the interfacial recombination rate between silicon (Si) and organic film for improving device efficiency. In this study, we demonstrated a thickness-dependent passivation effect, i.
View Article and Find Full Text PDFLow-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates.
Nanotechnology
March 2014
Nanjing University, School of Electronic Science and Engineering, Nanjing 210093, Jiangsu, People's Republic of China. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer.
View Article and Find Full Text PDF