Surface passivation of organometal halide perovskites by atomic layer deposition: an investigation of the mechanism of efficient inverted planar solar cells.

Interface passivation plays a pivotal role in achieving high-efficiency organic metal halide perovskite solar cells (PSCs). It has been recently revealed that atomic layer deposition (ALD) of wide-band gap oxides shows great potential to effectively passivate defects at the interface, and ALD is also of great technological promise for industrial upscaling. However, the conflicting observations of ALD passivation are often reported in the literature, even with very similar ALD conditions.