Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy.

Impedance spectroscopy provides relevant knowledge on the recombination and extraction of photogenerated charge carriers in various types of photovoltaic devices. In particular, this method is of great benefit to the study of crystalline silicon (c-Si)-based solar cells, a market-dominating commercial technology, for example, in terms of the comparison of various types of c-Si devices. This study investigates the dark and light electrophysical characteristics of a heterojunction silicon solar cell fabricated using plasma-enhanced chemical vapor deposition.

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices.

III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region.

Microcavity phonoritons - a coherent optical-to-microwave interface.

Optomechanical systems provide a pathway for the bidirectional optical-to-microwave interconversion in (quantum) networks. These systems can be implemented using hybrid platforms, which efficiently couple optical photons and microwaves via intermediate agents, e.g.

X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films.

X-ray diffraction from films consisting of layers with different thicknesses, structures and chemical contents is analysed. The disorder is described by probabilities for different sequences of layers. Closed analytical expressions for the diffracted X-ray intensity are obtained when the layers form a stationary Markov chain.

In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires.

Strain relaxation mechanisms occurring during self-induced growth of nitride nanowires are investigated by in situ reflection high-energy electron diffraction and ex situ high-resolution transmission electron microscopy. Epitaxial GaN nanowires nucleate on an AlN buffer layer under highly nitrogen-rich conditions via the initial formation of coherently strained three-dimensional islands according to the Volmer-Weber growth mechanism. The epitaxial strain relief in these islands occurs by two different processes.

Effects of surface roughness on surface acoustic wave propagation in semiconductor materials.

The effect of surface roughness on adhesion and tribological properties of films and interfaces is of key importance. Therefore, it is of utmost importance to be able to measure this quantity and to predict the effects that different roughness levels may cause. Roughness affects the propagation of surface acoustic waves on a material but there is little useful quantitative data on the topic.

Investigation of crossed SAW fields by scanning acoustic force microscopy.

We used multimode scanning acoustic force microscopy (SAFM) for studying noncollinearly propagating Rayleigh and Love wave fields. By analyzing torsion and bending movement of SAFM cantilever, normal and in-plane wave oscillation components are accessible. The SAFM principle is the down-conversion of surface oscillations into cantilever vibrations caused by the nonlinearity of the tip-sample interaction.