1 results match your criteria: "Northeastern University Shenyang 110819 PR China jcli@mail.neu.edu.cn +86 13804075191.[Affiliation]"
Bending effect on the resistive switching behavior of a NiO/TiO p-n heterojunction.
RSC Adv
May 2018
Vacuum and Fluid Engineering Research Center, School of Mechanical Engineering & Automation, Northeastern University Shenyang 110819 PR China +86 13804075191.
Herein, NiO/TiO heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions.
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