synthesis of monolayer graphene on silicon for near-infrared photodetectors.

Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source. After spin-coating the PMMA carbon source on the Si substrate, the Cu catalyst was deposited on PMMA/Si by electron beam evaporation. After that, graphene was directly synthesized on Si by decomposition and dehydrogenation of PMMA and the catalyzation effect of Cu under a simple thermal annealing process.