Propyl paraben removal using CuO/ZnO-NPs photocatalyst elaborated via green method.

The aim of the present work is to investigate the photocatalytic degradation of propyl paraben (propyl para-hydroxybenzoate, PrP) using CuO-ZnO-NPs photocatalyst followed by the identification of the oxidation by-products. The CuO-ZnO-NPs material, synthesized using a green chemistry approach, was used as a photocatalyst for the removal of PrP. The nanoparticles were characterized by XRD, XRF, diffuse reflectance spectroscopy, ATG/DTG, FTIR, SEM-EDX, BET and FRX techniques.

New Label-Free DNA Nanosensor Based on Top-Gated Metal-Ferroelectric-Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study.

In this paper, a new label-free DNA nanosensor based on a top-gated (TG) metal-ferroelectric-metal (MFM) graphene nanoribbon field-effect transistor (TG-MFM GNRFET) is proposed through a simulation approach. The DNA sensing principle is founded on the dielectric modulation concept. The computational method employed to evaluate the proposed nanobiosensor relies on the coupled solutions of a rigorous quantum simulation with the Landau-Khalatnikov equation, considering ballistic transport conditions.

WS Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off.

In this paper, we propose an ultrascaled WS field-effect transistor equipped with a Pd/Pt sensitive gate for high-performance and low-power hydrogen gas sensing applications. The proposed nanosensor is simulated by self-consistently solving a quantum transport equation with electrostatics at the ballistic limit. The gas sensing principle is based on the gas-induced change in the metal gate work function.

Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics.

This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver with the mode space non-equilibrium Green's function (NEGF) in the ballistic limit. Adopting the vacuum gate dielectric (VGD) paradigm ensures radiation-hardened functionality while avoiding radiation-induced trapped charge mechanisms, while the doping-free paradigm facilitates fabrication flexibility by avoiding the realization of a sharp doping gradient in the nanoscale regime.

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.

In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green's function (NEGF) formalism coupled with the Poisson's equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs' doping and multi-gas sensing.