Enhancing the Responsiveness of Thermoelectric Gas Sensors with Boron-Doped and Thermally Annealed SiGe Thin Films via Low-Pressure Chemical Vapor Deposition.

Thermoelectric gas sensor (THGS) devices with catalysts and SiGe thin films of different boron doping levels of 10, 10, and 10 cm were fabricated, and their transport properties are investigated. SiGe films were deposited on SiN/SiO multilayers on Si substrates using low-pressure chemical vapor deposition (LPCVD) and thermally annealed at 1050 °C. The Seebeck coefficients of the SiGe films were increased after thermal annealing, ranging from 191 to 275 μV/K at temperatures of 74 to 468 °C in air, and reaching the highest power factor of 6.

Efficient optimization of the synthetic conditions for aerosol-assisted high-quality mesoporous CeO powders.

The morphology of surfactant-assisted mesoporous metal oxides was tuned to obtain high surface-area particles by utilizing the synthetic conditions for fabricating transparent thin films through an evaporation-induced self-assembly (EISA) process. For investigating their potential applications, especially for designing heterogeneous catalysts, mesoporous metal oxides should be obtained in powder forms; however, a serious limitation associated with their reproducibility persists. Herein, along with a rapid optimization approach, starting from determining and improving chemical composition for the fabrication of mesoporous metal oxide films, an advanced approach to obtain highly porous metal oxide powders is presented using a temperature-controlled spray-drying process with step-by-step but smooth optimization by combining several EISA processes, involving the utilization of a precursor solution optimized for a slow-drying process in the case of ceria (CeO) using poly(styrene)--poly(ethylene oxide) (PS--PEO).