Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample.

Temperature-dependent picosecond non-degenerate four-wave-mixing experiments were performed to explore the carrier dynamics in an InGaN/GaN multiple quantum well sample, in which light emission enhancement with surface plasmon (SP) coupling has been identified. In the time-resolved photoluminescence results, we can identify the faster carrier decay time of the sample with surface plasmon coupling. The faster decay time is due to this sample's ability to create additional channels for effective carrier recombination.