Complementary Circuits with WSe/Organic Semiconductor Heterostructure Field-Effect Transistors.

A device architecture based on heterostructure WSe/organic semiconductor field-effect transistors (FETs) is demonstrated in which ambipolar conduction is virtually eliminated, resulting in essentially unipolar FETs realized from an ambipolar semiconductor. For p-channel FETs, an electron-accepting organic semiconductor such as hexadecafluorocopperphthalocyanine (FCuPc) is used to form a heterolayer on top of WSe to effectively trap any undesirable electron currents. For n-channel FETs, a hole-accepting organic semiconductor such as pentacene is used to reduce the hole currents without affecting the electron currents.

Shape Anisotropy-Dependent Leaking in Magnetic Neurons for Bio-Mimetic Neuromorphic Computing.

Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes.

Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene.

Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1° does not alter the emergent valley symmetry or the single-particle band topology.

Spintronic Artificial Neurons Showing Integrate-and-Fire Behavior with Reliable Cycling Operation.

The rich dynamics of magnetic materials makes them promising candidates for neural networks that, like the brain, take advantage of dynamical behaviors to efficiently compute. Here, we experimentally show that integrate-and-fire neurons can be achieved using a magnetic nanodevice consisting of a domain wall racetrack and magnetic tunnel junctions in a way that has reliable, continuous operation over many cycles. We demonstrate the domain propagation in the domain wall racetrack (integration), reading using a magnetic tunnel junction (fire), and reset as the domain is ejected from the racetrack with over 100 continuous cycles.

Integrated multi-operand optical neurons for scalable and hardware-efficient deep learning.

Optical neural networks (ONNs) are promising hardware platforms for next-generation neuromorphic computing due to their high parallelism, low latency, and low energy consumption. However, previous integrated photonic tensor cores (PTCs) consume numerous single-operand optical modulators for signal and weight encoding, leading to large area costs and high propagation loss to implement large tensor operations. This work proposes a scalable and efficient optical dot-product engine based on customized multi-operand photonic devices, namely multi-operand optical neuron (MOON).

Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold.

Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits. However, many 2D resistive switching materials struggle with complex growth methods or limited scalability. 2D tellurium exhibits striking characteristics such as simplicity in chemistry, structure, and synthesis making it suitable for various applications.

Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS.

2D transition metal dichalcogenides (TMDs) exhibit exceptional resilience to mechanical deformation. Applied strain can have pronounced effects on properties such as the bandgaps and exciton dynamics of TMDs, via deformation potentials and electromechanical coupling. In this work, we use piezoresponse force microscopy to show that the inhomogeneous strain from nanobubbles produces dramatic, localized enhancements of the electromechanical response of monolayer MoS.

Electrochemical and Plasmonic Detection of Myocardial Infarction Using Microfluidic Biochip Incorporated with Mesoporous Nanoscaffolds.

This paper reports a microfluidic device for the electrochemical and plasmonic detection of cardiac myoglobin (cMb) and cardiac troponin I (cTnI) with noticeable limits of detection (LoD) as low as a few picograms per milliliter (pg/mL) ranges, achieved in a short detection time. The device features two working electrodes, each with a mesoporous NiVO nanoscaffold grafted with reduced graphene oxide (rGO) that improves the interaction of diffusing analyte molecules with the sensing surface by providing a high surface area and reaction kinetics. Electrochemical studies reveal sensitivities as high as 9.

Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems.

Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to those of digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based artificial dendrites (GrADs) that can implement dendritic processing.

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors.

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si.

Programmable Retention Characteristics in MoS-Based Atomristors for Neuromorphic and Reservoir Computing Systems.

In this study, we investigate the coexistence of short- and long-term memory effects owing to the programmable retention characteristics of a two-dimensional Au/MoS/Au atomristor device and determine the impact of these effects on synaptic properties. This device is constructed using bilayer MoS in a crossbar structure. The presence of both short- and long-term memory characteristics is proposed by using a filament model within the bilayer transition-metal dichalcogenide.

A non-invasive approach to skin cancer diagnosis via graphene electrical tattoos and electrical impedance tomography.

Making up one of the largest shares of diagnosed cancers worldwide, skin cancer is also one of the most treatable. However, this is contingent upon early diagnosis and correct skin cancer-type differentiation. Currently, methods for early detection that are accurate, rapid, and non-invasive are limited.

On-The-Spot Sampling and Detection of Viral Particles on Solid Surfaces Using a Sponge Virus Sensor Incorporated with Finger-Press Fluid Release.

This paper presents a sponge-based electrochemical sensor for rapid, on-site collection and analysis of infectious viruses on solid surfaces. The device utilizes a conducting porous sponge modified with graphene, graphene oxide, and specific antibodies. The sponge serves as a hydrophilic porous electrode capable of liquid collection and electrochemical measurements.

Ultra-fast switching memristors based on two-dimensional materials.

The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits.

A hybrid transistor with transcriptionally controlled computation and plasticity.

Organic electrochemical transistors (OECTs) are ideal devices for translating biological signals into electrical readouts and have applications in bioelectronics, biosensing, and neuromorphic computing. Despite their potential, developing programmable and modular methods for living systems to interface with OECTs has proven challenging. Here we describe hybrid OECTs containing the model electroactive bacterium Shewanella oneidensis that enable the transduction of biological computations to electrical responses.

Elucidating Piezoelectricity and Strain in Monolayer MoS at the Nanoscale Using Kelvin Probe Force Microscopy.

Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm.

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer.

Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes.

Reversible Transition of Semiconducting PtSe and Metallic PtTe for Scalable All-2D Edge-Contacted FETs.

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe) with in-plane platinum ditelluride (PtTe) edge contacts, mitigating the aforementioned challenges.

Relativistic DFT Calculations of Cadmium and Selenium Solid-State NMR Spectra of CdSe Nanocrystal Surfaces.

Solid-state NMR spectra have been used to probe the structure of CdSe nanocrystals and propose detailed models of their surface structures. Density functional theory (DFT)-optimized cluster models that represent probable molecular structures of carboxylate-coordinated surface sites have been proposed. However, to the best of our knowledge, Cd and Se chemical shifts have not been calculated for these surface models.

Massively Scalable Self-Assembly of Nano and Microparticle Monolayers via Aerosol Assisted Deposition.

An extremely rapid process for self-assembling well-ordered, nano, and microparticle monolayers via a novel aerosolized method is presented. The novel technique can reach monolayer self-assembly rates as high as 268 cm min from a single aerosolizing source and methods to reach faster monolayer self-assembly rates are outlined. A new physical mechanism describing the self-assembly process is presented and new insights enabling high-efficiency nanoparticle monolayer self-assembly are developed.

Plant Virus Sensor for the Rapid Detection of Bean Pod Mottle Virus Using Virus-Specific Nanocavities.

This study presents a miniaturized sensor for rapid, selective, and sensitive detection of bean pod mottle virus (BPMV) in soybean plants. The sensor employs molecularly imprinted polymer technology to generate BPMV-specific nanocavities in porous polypyrrole. Leveraging the porous structure, high surface reactivity, and electron transfer properties of polypyrrole, the sensor achieves a sensitivity of 143 μA ng mL cm, a concentration range of 0.