1 results match your criteria: "Lund University Box 118 S-221 00 Lund Sweden Sebastian.Lehmann@ftf.lth.se.[Affiliation]"
Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires.
Nanoscale Adv
August 2022
Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
Article Synopsis
- The study explores the control of InAs shell growth on GaAs nanowire cores, focusing on selectivity influenced by core crystal phase and morphology.
- The research highlights two main findings: crystal phase selective growth occurs under certain conditions, and facet-dependent selectivity can be achieved by altering nanowire morphology.
- A novel 2-step growth method is proposed to manage InAs shell thickness while preserving selectivity, enabling enhanced functionalities in one-dimensional nanostructures through precise engineering.