Wafer-Scale Growth of SbTe Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors.

In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (SbTe) thin film and the n-type silicon (Si) substrates. A SbTe film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in.