4 results match your criteria: "Korean Institute of Materials Science[Affiliation]"

The emergence of stretchable electronic devices has attracted intensive attention. However, most of the existing stretchable electronic devices can generally be stretched only in one specific direction and show limited specific capacitance and energy density. Here, we report a stretchable isotropic buckled carbon nanotube (CNT) film, which is used as electrodes for supercapacitors with low sheet resistance, high omnidirectional stretchability, and electro-mechanical stability under repeated stretching.

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Graphene-Based Fibers: A Review.

Adv Mater

September 2015

Department of Mechanical Engineering, University of Delaware, Newark, DE, 19716, USA.

Motivated by their unique structure and excellent properties, significant progress has been made in recent years in the development of graphene-based fibers (GBFs). Potential applications of GBFs can be found, for instance, in conducting wires, energy storage and conversion devices, actuators, field emitters, solid-phase microextraction, springs, and catalysis. In contrast to graphene-based aerogels (GBAs) and membranes (GBMs), GBFs demonstrate remarkable mechanical and electrical properties and can be bent, knotted, or woven into flexible electronic textiles.

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While the emerging wire-shaped supercapacitors (WSS) have been demonstrated as promising energy storage devices to be implemented in smart textiles, challenges in achieving the combination of both high mechanical stretchability and excellent electrochemical performance still exist. Here, an asymmetric configuration is applied to the WSS, extending the potential window from 0.8 to 1.

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Direct synthesis of silicon oxide nanowires on organic polymer substrates.

Nanotechnology

September 2009

Materials Processing Division, Korean Institute of Materials Science, 531 Changwondaero, Changwon, Gyeongnam 641-831, Republic of Korea.

A nanowire growth model assisted by polymer reconstruction was discovered and used to achieve the direct synthesis of amorphous silicon oxide nanowires (SiONWs) on polyethylene terephthalate (PET) substrates at low growth temperatures (no more than 150 degrees C) using plasma-enhanced chemical vapor deposition (PECVD). The reconstructed polymers were generated from the scission and recombination of polymer chains on the surface of PET substrates under active Ar:O(2) plasma in the PECVD process. The highly ordered nanowire arrays exhibited an excellent geometrical configuration that is comparable to that of SiONWs grown on Si substrates at temperatures higher than 1000 degrees C by using conventional vapor deposition methods with various metal catalysts.

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