1 results match your criteria: "Korea. bhl@gist.ac.kr and Center for Emerging Electric Devices and Systems[Affiliation]"
A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.
Nanoscale
February 2017
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. and Center for Emerging Electric Devices and Systems, Departmant of Nanobio Materials and Electronics, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea.
We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.
View Article and Find Full Text PDF