Amelioration of Toll-like Receptor-4 Signaling and Promotion of Mitochondrial Function by Mature Silkworm Extracts in Ex Vivo and in Vitro Macrophages.

Objectives: The unknown immune-enhancing effects of steamed mature silkworms ( L.), known as HongJam (HJ), were investigated.

Methods: Supercritical fluid extracts from the White Jade variety of HJ (WJ-SCEs) were applied to in vitro RAW264.

Cation-eutaxy-enabled III-V-derived van der Waals crystals as memristive semiconductors.

Novel two-dimensional semiconductor crystals can exhibit diverse physical properties beyond their inherent semiconducting attributes, making their pursuit paramount. Memristive properties, as exemplars of these attributes, are predominantly manifested in wide-bandgap materials. However, simultaneously harnessing semiconductor properties alongside memristive characteristics to produce memtransistors is challenging.

Fluorine contamination, mobility, and risks in soils at a phosphate-gypsum waste landfill: a new analytical method and comparison with previous methods.

This study used a new X-ray fluorescence (XRF)-based analytical method with better precision and sensitivity to evaluate the fluorine concentrations in soil. It was hypothesized that the XRF method with a pellet-synthesizing procedure may effectively analyze the fluorine concentrations in soil with ease and reliability. The total fluorine concentrations determined using XRF were compared with those determined using three different types of analytical protocols-incineration/distillation, alkaline fusion, and aqua regia extraction procedures.

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors.

While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios.

Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing.

While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of ∼110 fJ, excellent linearity, and short-/long-term plasticity.

Ipconazole Disrupts Mitochondrial Homeostasis and Alters GABAergic Neuronal Development in Zebrafish.

Ipconazole, a demethylation inhibitor of fungal ergosterol biosynthesis, is widely used in modern agriculture for foliar and seed treatment, and is authorized for use in livestock feed. Waste from ipconazole treatment enters rivers and groundwater through disposal and rain, posing potential toxicity to humans and other organisms. Its metabolites remain stable under standard hydrolysis conditions; however, their neurodevelopmental toxicity is unknown.

Visualizing Line Defects in non-van der Waals BiOSe Using Raman Spectroscopy.

Atomic-layered materials, such as high-quality bismuth oxychalcogenides, which are composed of oppositely charged alternate layers grown using chemical vapor deposition, have attracted considerable attention. Their physical properties are well-suited for high-speed, low-power-consumption optoelectronic devices, and the rapid determination of their crystallographic characteristics is crucial for scalability and integration. In this study, we introduce how the crystallographic structure and quality of such materials can be projected through Raman spectroscopy analysis.

Sub-millimeter size high mobility single crystal MoSe monolayers synthesized by NaCl-assisted chemical vapor deposition.

Monolayer MoSe is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe monolayers with mobilities ranging from 38 to 8 cm V s.

Factors that determine thione(thiol)-disulfide interconversion in a bis(thiosemicarbazone) copper(ii) complex.

Solvent-, acidity-, and redox-responsive thione(thiol)-disulfide interconversion were achieved by a dinuclear copper(ii) complex bearing a bis(thiosemicarbazone) (bTSC) ligand. The role of copper(ii) ion coordination was rationalized by parallel comparison with a bare bTSC ligand and zinc(ii) bTSC complexes under identical reaction conditions.

Photo-enhanced gas sensing of SnS with nanoscale defects.

Recently a SnS based NO gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO gas sensor based on SnS with nanoscale defects by photon illumination, and a detection limit of 2.

Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaN.

We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(111) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of two partial dislocations. These results imply that the inclined TED possesses a Ga-Ga atomic configuration that is energetically unfavorable.

Structural changes, thermodynamic properties, H magic angle spinning NMR, and N NMR of (NH)CuCl·2HO.

The structural changes and thermodynamic properties of (NH)CuCl·2HO were studied by differential scanning calorimetry (DSC) and thermogravimetric (TG) analysis. In addition, the chemical shift, line width, and spin-lattice relaxation time of the crystals were also investigated by H magic angle spinning nuclear magnetic resonance (MAS NMR), focusing on the role of NH and HO near the phase transition temperature. The change at (=406 K) and (=437 K) seems to be a chemical change caused by thermal decomposition rather than a physical change such as a structural phase transition.