Application of strain to orbital-spin-coupled system MnV2O4 at cryogenic temperatures within a transmission electron microscope.

The impact of mechanical stress on the morphology of crystallographic and magnetic domains in shape-controlled specimens of an orbital-spin-coupled system, MnV2O4, was examined by cryogenic Lorentz microscopy. Because of the difference in thermal expansion coefficients of MnV2O4 and the supporting Mo mesh, compression on the order of 0.01% was applied to the thin-foil specimens near the structural/magnetic phase transformation temperatures.

Mobile metallic domain walls in an all-in-all-out magnetic insulator.

Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy.

Metallic ground state in an ion-gated two-dimensional superconductor.

Recently emerging two-dimensional (2D) superconductors in atomically thin layers and at heterogeneous interfaces are attracting growing interest in condensed matter physics. Here, we report that an ion-gated zirconium nitride chloride surface, exhibiting a dome-shaped phase diagram with a maximum critical temperature of 14.8 kelvin, behaves as a superconductor persisting to the 2D limit.

Electrically switchable chiral light-emitting transistor.

Tungsten diselenide (WSe2) and related transition metal dichalcogenides exhibit interesting optoelectronic properties owing to their peculiar band structures originating from the valley degree of freedom. Although the optical generation and detection of valley polarization has been demonstrated, it has been difficult to realize active valley-dependent functions suitable for device applications. We report an electrically switchable, circularly polarized light source based on the material's valley degree of freedom.