Photonic topological phase transition induced by material phase transition.

Photonic topological insulators (PTIs) have been proposed as an analogy to topological insulators in electronic systems. In particular, two-dimensional PTIs have gained attention for the integrated circuit applications. However, controlling the topological phase after fabrication is difficult because the photonic topology requires the built-in specific structures.

Diffusion-Dominated Luminescence Dynamics of CsPbBr Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy.

Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the nanoscale. However, halide perovskites, which are promising optoelectronic materials, exhibit significantly different decay dynamics in their CL and photoluminescence (PL). We conducted time-correlation CL measurements of CsPbBr using Hanbury Brown-Twiss interferometry and compared them with time-resolved PL.

Varifocal Metalenses: Harnessing Polarization-Dependent Superposition for Continuous Focal Length Control.

Traditional varifocal lenses are bulky and mechanically complex. Emerging active metalenses promise compactness and design flexibility but face issues like mechanical tuning reliability and nonlinear focal length tuning due to additional medium requirements. In this work, we propose a varifocal metalens design based on superimposing light intensity distributions from two orthogonal polarization states.

Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers.

A focused ion beam (FIB) can precisely mill samples and freely form any nanostructure even on surfaces with curvature, like a nanowire surface, which are difficult to implement by using conventional fabrication techniques, e.g. electron beam lithography.

Far-field optical imaging of topological edge states in zigzag plasmonic chains.

Topological photonics mimicking topological insulators has recently attracted considerable attention. The Su-Schrieffer-Heeger (SSH) model, which is a fundamental topological system, has been experimentally demonstrated in many photonic systems owing to its simplicity. In particular, a zigzag chain, which is described by the SSH model, shows intriguing functionality such as polarization-dependent switching of topological edge states.

Emulating the local Kuramoto model with an injection-locked photonic crystal laser array.

The Kuramoto model is a mathematical model for describing the collective synchronization phenomena of coupled oscillators. We theoretically demonstrate that an array of coupled photonic crystal lasers emulates the Kuramoto model with non-delayed nearest-neighbor coupling (the local Kuramoto model). Our novel strategy employs indirect coupling between lasers via additional cold cavities.

Rare-Earth-Mediated Optomechanical System in the Reversed Dissipation Regime.

Strain-mediated interaction between phonons and telecom photons is demonstrated using excited states of erbium ions embedded in a mechanical resonator. Owing to the extremely long-lived nature of rare-earth ions, the dissipation rate of the optical resonance falls below that of the mechanical one. Thus, a "reversed dissipation regime" is achieved in the optical frequency region.

Generation and Annihilation of Topologically Protected Bound States in the Continuum and Circularly Polarized States by Symmetry Breaking.

We demonstrate by breaking the C_{6} symmetry for higher-order at-Γ bound states in the continuum (BICs) with topological charge -2 in photonic crystals (i) deterministic generation of off-Γ BICs from the at-Γ BIC and (ii) a variety of pair-creation and annihilation processes of circularly polarized states with opposite topological charges and the same handedness. To explain these phenomena, we introduce the handedness-wise topological charge quantized to a half-integer. The handedness-wise charge gives a unified picture of various phenomena involving BICs and circularly polarized states.

Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.

Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation.

Highly Confined and Switchable Mid-Infrared Surface Phonon Polariton Resonances of Planar Circular Cavities with a Phase Change Material.

Mid-infrared (MIR) photonics demands highly confined optical fields to obtain efficient interaction between long-wavelength light and nanomaterials. Surface polaritons excited on polar semiconductor and metallic material interfaces exhibit near-fields localized on subwavelength scales. However, realizing a stronger field concentration in a cavity with a high quality ( Q) factor and a small mode volume is still challenging in the MIR region.

Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts.

Photonic Topological Insulating Phase Induced Solely by Gain and Loss.

We reveal a one-dimensional topological insulating phase induced solely by gain and loss control in non-Hermitian optical lattices. The system comprises units of four uniformly coupled cavities, where the successive two have loss; the others experience gain, and they are balanced under two magnitudes. The gain and loss parts are effectively dimerized, and a bulk band gap, topological transition, midgap topological edge, and interface states in finite systems can all be achieved by controlled pumping.

Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.

We report diameter-tailored luminescence in telecom band of InP/InAs multi-heterostructure nanowires with continuously-modulated diameter from microscale to nanoscale. By using the self-catalyzed vapor-solid-liquid approach, we tune the indium particle size, and consequently the InP/InAs nanowire diameter, during growth by modulating the flow rate of the indium source material. This technique allows a high degree of continuous tuning in a wide scale from microscale to nanoscale.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer.

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices.

Optical nonlinearity enhancement with graphene-decorated silicon waveguides.

Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene's area and position.

Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires.

This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined nanostructures, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes. We realized the bridging by controlling the seed indium nanoparticle position through a self-assembly process. Site-defined InP nanowires were then grown from the indium-nanoparticle array in the vapor-liquid-solid mode through a "seed and grow" process.

Controlled 1.1-1.6 μm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires.

We report controlled 1.1-1.6 μm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires (NWs).

Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films.

Polycrystalline Er-Sc silicates (Er x Sc2-x Si2O7 and Er x Sc2-x SiO5) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er x Sc2-x Si2O7 is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO2 interlayers.

Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity.

Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities.

Entangled photons from on-chip slow light.

We report the first entanglement generation experiment using an on-chip slow light device. With highly efficient spontaneous four-wave mixing enhanced by the slow light effect in a coupled resonator optical waveguide based on a silicon photonic crystal, we generated 1.5-μm-band high-dimensional time-bin entangled photon pairs.

InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure.

Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector.

Ultralow-energy and high-contrast all-optical switch involving Fano resonance based on coupled photonic crystal nanocavities.

We experimentally and theoretically clarified that a Fano resonant system based on a coupled optical cavity has better performance when used as an all-optical switch than a single cavity in terms of switching energy, contrast, and operation bandwidth. We successfully fabricated a Fano system consisting of doubly coupled photonic-crystal (PhC) nanocavities, and demonstrated all-optical switching for the first time. A steep asymmetric transmission spectrum was clearly observed, thereby enabling a low-energy and high-contrast switching operation.