4 results match your criteria: "Japan [2] Institute of Physics[Affiliation]"
Nanotechnology
September 2016
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. Institute of Physics, Czech Academy of Sciences, Na Slovance, 2, Prague 8, 18221, Czech Republic.
The electrical characterization of single-polymer chains on a surface is an important step towards novel molecular device development. The main challenge is the lack of appropriate atomically flat insulating substrates for fabricating single-polymer chains. Here, using atomic force microscopy, we demonstrate that the (0001) surface of an insulating hexagonal boron nitride (h-BN) substrate leads to a flat-lying self-assembled monolayer of diacetylene compounds.
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November 2008
The Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwa-no-ha, Kashiwa 277-8581, Japan. Institute of Physics, Chinese Academy of Science, Beijing 100080, People's Republic of China.
Individual adsorption and two-dimensional assembling of 5,10,15,20-tetrakis-(4-bromophenyl)-porphyrin-Co (TBrPP-Co) molecules on a Si(111)-[Formula: see text] Ag reconstructed surface have been studied using low-temperature scanning tunnelling microscopy (STM). All the isolated molecules are observed in a planar shape with slight distortion. The isolated molecules can be controllably rotated with an STM tip to the orientation along the trigonal lattice ([Formula: see text] direction) of the substrate.
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May 2008
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02-668 Warsaw, Poland.
The solid state reaction of deposited Fe (four monolayers, ML) with vicinal Si(111) substrate induced by subsequent thermal treatment has been studied using scanning tunnelling microscopy. At the lower range of annealing temperatures up to 400 °C the bunched steps of bare substrate are reproduced by the surface of the covering iron silicide layer. At 400 °C the onset of three-dimensional growth of iron silicide islands is observed.
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February 2000
Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland. Laboratoire de Spectr.
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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