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Institute of Semiconductors[Affiliation] Publications | LitMetric

1,722 results match your criteria: "Institute of Semiconductors[Affiliation]"

Data-driven natural computational psychophysiology in class.

Cogn Neurodyn

December 2024

School of Biomedical Engineering, Southern Medical University, Guangzhou, 510515 China.

The assessment of mental fatigue (MF) and attention span in educational and healthcare settings frequently relies on subjective scales or methods such as induced-task interruption tools. However, these approaches are deficient in real-time evaluation and dynamic definitions. To address this gap, this paper proposes a Continuous Quantitative Scale (CQS) that allows for the natural and real-time measurement of MF based on group-synchronized electroencephalogram (EEG) data.

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Signal uniformity is crucial for reliable and quantifiable surface-enhanced Raman scattering (SERS) measurements. However, challenges arise due to the continuous impact of localized hottest spots and the coffee ring effect on signal uniformity. In response to this, we developed a platform featuring a hierarchical structure with Ag nanopores and microbowls (HANM) and incorporated superhydrophobic/superhydrophilic (SHB/SHL) treatments.

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Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.

Nanomaterials (Basel)

December 2024

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

We systematically study the transport properties of arsenene nanoribbon tunneling field-effect transistors (TFETs) along the armchair directions using first-principles calculations based on density functional theory combined with the non-equilibrium Green's function approach. The pristine nanoribbon TFET devices with and without underlap (UL) exhibit poor performance. Introducing a H defect in the left UL region between the source and channel can drastically enhance the ON-state currents and reduce the SS to below 60 mV/decade.

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3D Heterogeneous Sensing System for Multimode Parrallel Signal No-Spatiotemporal Misalignment Recognition.

Adv Mater

December 2024

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

The spatiotemporal error caused by planar tiled structure design and the waste of communication resources brought on by the transmission of a single channel are two challenges facing the development of multifunctional intelligent sensors with high-density integration. A homo-spatiotemporal multisensory parallel transmission system (HMPTs) is expanded to realize multisignal no-spatiotemporal misalignment recognition and efficient parallel transmission. First, this system optimizes the distribution of multifunctional sensors, completes the 3D vertical heterogeneous layout of four sensors, and achieves material multi-information detection at a single place with no-spatiotemporal deviation.

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Article Synopsis
  • - The study investigates how modern design elements can blend with traditional garden aesthetics using style transfer algorithms to create innovative and sustainable garden designs.
  • - Experiments showcased the successful integration of traditional landscape paintings' aesthetics into virtual scenes, specifically using the Humble Administrator's Garden as a case study.
  • - This research highlights the potential for technology to enhance garden design by marrying cultural heritage with new methods, paving the way for future preservation and innovative applications in urban cultural heritage.
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Anti-Interference All-Optical Logic Computing Based on a 2D Polarization-Sensitive Photodiode.

Nano Lett

December 2024

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Optical logic operation is promising for ultrafast information processing and optical computing due to the high computation speed and low power consumption. However, conventional optical logic devices require either a complex structure and circuit design or a constant voltage supply, which impedes the development of high-density integrated circuits. Here, all-optical logic devices are designed using a self-powered polarization-sensitive photodiode of the GeSe homojunction, which is attributed to an anisotropic band structure and built-in electric field.

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Chip-encoded high-security classical optical key distribution.

Nanophotonics

August 2024

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Article Synopsis
  • Information security is crucial for daily life and national security, but traditional secure key distribution (SKD) methods face challenges from quantum computers.
  • New optical SKD methods like quantum SKD, chaos SKD, and reciprocity-based SKD are gaining attention, but they often require pre-shared info or only work under limited conditions, and high-cost quantum SKD remains impractical.
  • The paper presents a novel high-security chip-encoded classical optical SKD system using silicon photonic chips, achieving a key generation rate of 100 bit/s with low error, and demonstrates improved capacity through wavelength division multiplexing, marking a step towards affordable and secure optical SKD solutions.
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Demultiplexing-free ultra-compact WDM-compatible multimode optical switch assisted by mode exchanger.

Nanophotonics

August 2024

Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.

Silicon-based optical switches are integral to on-chip optical interconnects, and mode-division multiplexing (MDM) technology has enabled modes to function as carriers in routing, further boosting optical switches' link capacity. However, traditional multimode optical switches, which typically use Mach-Zehnder interferometer (MZI) structures and mode (de)multiplexers, are complex and occupy significant physical space. In this paper, we propose and experimentally demonstrate a novel demultiplexing-free dual-mode 3 × 3 thermal-optical switch based on micro-rings (MRs) and mode exchangers (MEs).

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A study is conducted on a GaAs-based high-contrast subwavelength chiral metasurface (HCCM) designed for 1064 nm. The metasurface integrates a high-contrast subwavelength grating (HCG) for TM mode modulation, a SiO support layer, and a compact quarter-waveplate (QWP) to convert linearly polarized light to circularly polarized light. The HCG achieves ultra-high reflectivity at 1064 nm, attributed to the large refractive index contrast between the Si grating and SiO2 layer.

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BaPb(CO)F: Enhancing Birefringence by a Multiunit Synergy Effect.

Inorg Chem

December 2024

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.

Carbonates are ideal birefringent materials because their π-conjugated [CO] groups are beneficial for large anisotropy. How to maximize the birefringence and maintain a wide transmittance simultaneously in carbonates is a great challenge. Adopting a multiple-functional group synergy strategy by combining alkaline-earth metal Ba with large ion radius, PbOF distorted hexagonal pyramid, and paralleled π-conjugated CO triangles together, we synthesized a new metal carbonate crystal, BaPb(CO)F.

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Investigation of Interface-Induced Helicity-Dependent Photocurrent and High- Ferromagnetism in Wafer-Scale 2D Ferromagnetic FeGeTe/BiTe Heterostructures.

ACS Appl Mater Interfaces

December 2024

Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China.

Article Synopsis
  • - The study investigates the helicity-dependent photocurrent (HDPC) in FeGeTe/BiTe heterostructures grown on sapphire substrates, revealing that the photocurrent is primarily driven by the circular photogalvanic effect (CPGE) due to the interface coupling of the materials.
  • - As tensile strain is applied, the CPGE current decreases because the strain reduces the interface-induced spin-orbit coupling; however, the 5 nm FeGeTe/BiTe sample can effectively detect circularly polarized light under the right conditions.
  • - The findings also indicate that the behavior of CPGE depends differently on FeGeTe film thickness compared to Curie temperature, suggesting that strong exchange interactions at the interface may enhance fer
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B: a complete coating icosahedral B core-shell structure.

Phys Chem Chem Phys

November 2024

Department of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang 050024, Hebei, China.

Using first-principles calculations, this study unveils a spherically aromatic core-shell B@B structure featuring a B icosahedral core, which is the smallest complete coating icosahedral B core-shell B cluster to date. Detailed orbital and bonding analyses reveal that the icosahedral B core exhibits prominent superatomic behavior with the electronic configuration 1S1P1D1F.

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Ag nanoclusters loaded ultra-thin porous SnO nanosheets for ppb level isopropanol detection.

Talanta

March 2025

College of Electronic Science & Engineering, Jilin University, Changchun, 130012, China. Electronic address:

Although loading noble metal silver (Ag) is one of the strategies to improve the performance of semiconductor metal oxide (SMO) sensors, traditional methods of synthesizing Ag nanoparticles do not effectively allow for control over their size and shape, which limits their gas sensing performance. Fortunately, noble metal nanoclusters (NCs) with well-defined atomic structures can overcome the aforementioned issues. In this study, we present the first successful loading of Ag NCs onto ultra-thin porous SnO nanosheets, achieving ppb-level detection of isopropanol (IPA).

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2D stacking presents a promising avenue for creating periodic superstructures that unveil novel physical phenomena. While extensive research has focused on lateral 2D material superstructures formed through composition modulation and twisted moiré structures, the exploration of vertical periodicity in 2D material superstructures remains limited. Although weak van der Waals interfaces enable layer-by-layer vertical stacking, traditional methods struggle to control in-plane crystal orientation over large areas, and the vertical dimension is constrained by unscalable, low-throughput processes, preventing the achievement of global order structures.

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Ethyl acetate is a critical medical indicator for detecting certain types of cancer. However, at present, available sensitive materials often exhibit drawbacks, such as high operating temperatures and poor responses to low concentrations of ethyl acetate. In this study, a ZnO nanorod sensing material was prepared using high-temperature annealing and a hydrothermally synthesized metal-organic framework (MOF) as a template.

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Distinct ultrafast dynamics of bilayer and trilayer nickelate superconductors regarding the density-wave-like transitions.

Sci Bull (Beijing)

October 2024

State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China. Electronic address:

Article Synopsis
  • Bilayer and trilayer nickelate superconductors, specifically LaNiO (n=2 and 3), show unique properties at both high-temperature superconductivity and ambient pressure, including non-Fermi liquid behavior and density-wave transitions.
  • Using ultrafast reflectivity measurements, researchers found significant differences in the dynamics of bilayer and trilayer nickelates, highlighting a coherent phonon mode in the bilayer LaNiO that isn’t present in the trilayer.
  • The study reveals that the electron-phonon coupling has a minor effect on the electronic properties of LaNiO, with findings necessary for further understanding the relationship between superconductivity and density-wave transitions in these materials.*
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Age-related differences of the time-varying features in the brain functional connectivity and cognitive aging.

Psychophysiology

November 2024

Gansu Provincial Key Laboratory of Wearable Computing, School of Information Science and Engineering, Lanzhou University, Lanzhou, Gansu, China.

Brain functional modular organization changes with age. Considering the brain as a dynamic system, recent studies have suggested that time-varying connectivity provides more information on brain functions. However, the spontaneous reconfiguration of modular brain structures over time during aging remains poorly understood.

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Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate.

Nanotechnology

November 2024

Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.

In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled.

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Softening of the optical phonon by reduced interatomic bonding strength without depolarization.

Nature

October 2024

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

Softening of the transverse optical (TO) phonon, which could trigger ferroelectric phase transition, can usually be achieved by enhancing the long-range Coulomb interaction over the short-range bonding force, for example, by increasing the Born effective charges. However, it suffers from depolarization effects as the induced ferroelectricity is suppressed on size reduction of the host materials towards high-density nanoscale electronics. Here, we present an alternative route to drive the TO phonon softening by showing that the abnormal soft TO phonon in rocksalt-structured ultrawide-bandgap BeO (ref.

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Mode-Locked Characteristic of L-Band All-Fiber Laser with Different 2D and Quasi-2D Perovskite Saturable Absorbers.

ACS Appl Mater Interfaces

November 2024

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Article Synopsis
  • Recent advancements in quasi-2D perovskites, particularly ((PEA)(CsPbBr3)PbBr), have highlighted their exceptional optoelectronic properties and environmental resilience, creating diverse application possibilities.
  • Structural differences in these materials, caused by varying values of "", lead to unique nonlinear behaviors that have not been fully explored yet.
  • Comparative studies reveal that the = 5 quasi-2D perovskite showcases superior saturable absorption and optimal performance in laser applications, making it promising for ultrafast optics due to its favorable characteristics.
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One-Dimensional Quantum Dot Array Integrated with Charge Sensors in an InAs Nanowire.

Nano Lett

November 2024

Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.

We report an experimental study of a 1D quintuple-quantum-dot array integrated with two charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array, and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-dot array is then tuned up, and its charge configurations are fully mapped out with the two charge sensors.

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We propose and demonstrate a photonic-assisted approach for generating arbitrary microwave waveforms based on a dual-polarization dual-parallel Mach-Zehnder modulator, offering significant advantages in terms of tunability of repetition rates and anti-dispersion capability. In order to generate diverse microwave waveforms, two sinusoidal radio frequency signals with distinct frequency relationships are applied to the dual-polarization dual-parallel Mach-Zehnder modulator. By adjusting the power of the applied sinusoidal radio frequency signal, the power ratio between these orthogonal polarized optical sidebands can be changed, and thereby desired radio frequency waveforms can be obtained after photoelectric conversion.

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Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.

Micromachines (Basel)

September 2024

Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.

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Developing high-quality wide bandgap (WBG) perovskites with ≈1.7 eV bandgap (E) is critical to couple with silicon and create efficient silicon/perovskite tandem devices. The sufferings of large open-circuit voltage (V) loss and unstable power output under operation continuously highlight the criticality to fully develop high-quality WBG perovskite films.

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Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInPS.

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