1,020 results match your criteria: "Institute of Semiconductor[Affiliation]"

Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.

ACS Appl Electron Mater

December 2024

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria.

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures ( = 100-350 °C) and pristine growth pressures (≲10 mbar). First, we show that a decreasing does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy.

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Role of en-APTAS Membranes in Enhancing the NO Gas-Sensing Characteristics of Carbon Nanotube/ZnO-Based Memristor Gas Sensors.

Biosensors (Basel)

December 2024

Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

NO is a toxic gas that can damage the lungs with prolonged exposure and contribute to health conditions, such as asthma in children. Detecting NO is therefore crucial for maintaining a healthy environment. Carbon nanotubes (CNTs) are promising materials for NO gas sensors due to their excellent electronic properties and high adsorption energy for NO molecules.

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Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity and polarization orientation as well as polarization independent current are found.

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Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-InSe offers a compelling solution to these challenges.

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Low-Temperature Lithium Metal Batteries Achieved by Synergistically Enhanced Screening Li Desolvation Kinetics.

Adv Mater

December 2024

State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China.

Lithium metal anode is desired by high capacity and low potential toward higher energy density than commercial graphite anode. However, the low-temperature Li metal batteries suffer from dendrite formation and dead Li resulting from uneven Li behaviors of flux with huge desolvation/diffusion barriers, thus leading to short lifespan and safety concern. Herein, differing from electrolyte engineering, a strategy of delocalizing electrons with generating rich active sites to regulate Li desolvation/diffusion behaviors are demonstrated via decorating polar chemical groups on porous metal-organic frameworks (MOFs).

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Improving Energy Resolution of CdSe-Based γ-Ray Detectors through Asymmetric Schottky Contact Engineering Using Oxygen Plasma Treatment.

ACS Appl Mater Interfaces

December 2024

Advanced Laser Technology Laboratory of Anhui Province, Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.

When creating a Schottky contact to suppress the leakage current of semiconductor γ-ray detectors and improve their energy resolution, it is successfully employed the fact that the formation of a Schottky barrier is determined not only by the difference in the electrode and semiconductor work functions but also affected by the semiconductor surface state. Oxygen plasma (OP) treatment has been used to modify the surface states of CdSe single crystals (SCs) prior to the Au electrode deposition, thereby creating a Schottky contact at the metal-semiconductor interface. The -type Schottky contact formation has been confirmed by the - characteristics and ultraviolet photoelectron spectroscopy analysis.

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Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.

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Article Synopsis
  • 2D hybrid perovskites with quantum-well structures show great promise in optoelectronics due to their stability and electrical properties, but face issues with ion migration and chemical stability when enhancing electrical performance.
  • This study introduces a new approach to balance electrical properties and stability by substituting ethylammonium cations with 2-bromoethylamine cations in creating (Br-EA)PbBr single crystals.
  • The modifications lead to improved X-ray detector performance, achieving high sensitivity and low dark current drift, while also revealing novel interactions from molecular dipoles that could guide future perovskite applications.
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Article Synopsis
  • * It identifies that surface pits, ranging in size and depth, are influenced by factors such as substrate annealing temperature and the alloy composition of InAlAs.
  • * A model is proposed linking the formation of these surface pits and composition clusters to local strain fields near threading dislocations affecting the incorporation of In adatoms during growth.
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Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal Annealing.

Nanomaterials (Basel)

November 2024

Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

Article Synopsis
  • - The paper discusses the optimization of IGZO/Ag/IGZO (IAI) multilayer films using post-rapid thermal annealing (RTA) to improve their electrical conductivity and optical transmittance for solar cells.
  • - The optimized films achieved an average optical transmittance of 85% in visible light and a low sheet resistance of 6.03 Ω/□ after being annealed at 500 °C for 60 seconds.
  • - Testing with a solar cell simulator revealed a high photo-generated short circuit current density of 40.73 mA/cm, indicating that the IAI multilayer films are effective as transparent electrodes in solar cell applications.
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Stable π Radical BDPA: Adsorption on Cu(100) and Survival of Spin.

Chemphyschem

November 2024

Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität Linz, Altenbergerstraße 69, 4040, Linz, Austria.

The adsorption of the radical α,ɣ-bisdiphenylene-β-phenylallyl (BDPA) molecule to the Cu(100) surface was studied using scanning tunnelling microscopy (STM), scanning tunnelling spectroscopy (STS), and density functional theory (DFT) calculations accounting for dispersion forces. BDPA on Cu(100) was observed to align preferentially along directions due to weak Cu-C chemisorption between fluorenyl carbons with the underlying copper atoms. The curved shape of the BDPA molecule on Cu(100) can be ascribed to the lack of molecular orbital character on the phenyl substituent.

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Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in BiTe and BiSbTeSe (BSTS) thin films was investigated. At photon energies () of 1.

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Metallic nanoparticle dimers have been used to enhance the excitation rate of single-quantum emitters. The interparticle distance (d) of the dimers has a crucial influence on the signal enhancement. Therefore, precise control of d is desired for optimal performance.

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Alzheimer's disease (AD), characterized by severe and progressive cognitive decline, stands as one of the most prevalent and devastating forms of dementia. Based on our recent findings showing intermittent hypoxic conditioning improved neuronal function in patients with mild cognitive impairment, the present study aimed at investigating whether the neuroprotective effects of intermittent hypoxia can be replicated in a rat model of AD, which allows us to explore the underlying cellular mechanisms involving neuroinflammation, hypoxia inducible factor 1α (HIF1α), and cytochrome P450 family 2 subfamily E member 1 (CYP2E1). Forty-one adult male Wistar rats were randomly assigned to three groups: 1) Control group: received intracerebroventricular (ICV) injection of saline; 2) STZ group: received ICV injection of streptozotocin (STZ) to induce AD-like pathology; and 3) STZ + IHHT group received ICV injection of STZ as well as 15 daily sessions of intermittent hypoxia-hyperoxia training (IHHT).

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The search for a synthesis method to create longer ZnO NWAs with high-quality vertical alignment, and the investigation of their electrical properties, have become increasingly important. In this study, a hydrothermal method for growing vertically aligned arrays of ZnO nanowires (NWs) using localized heating was utilized. To produce longer NWs, the temperature environment of the growth system was optimized with a novel reaction container that provided improved thermal insulation.

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Bottom Electrode Modification Enables Efficient and Bright Silicon-Based Top-Emission Perovskite Light-Emitting Diodes.

Small

October 2024

State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.

The integration of perovskites with mature silicon platform has emerged as a promising approach in the development of efficient on-chip light sources and high-brightness displays. However, the performance of Si-based green perovskite light-emitting diodes (PeLEDs) still falls significantly short compared to their red and near-infrared counterparts. In this study, it is revealed that the high work function Au, widely employed in Si-based top-emission PeLEDs as the reflective bottom electrode, exhibits considerably lower reflectivity in the green spectrum than in the longer wavelengths.

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Tuning the optical absorption and exciton bound states of germanene by chemical functionalization.

Sci Rep

October 2024

Department of Industrial, Electronic and Mechanical Engineering, Roma Tre University, Via della Vasca Navale 79, 00146, Rome, Italy.

We present a comprehensive study of buckled honeycomb germanene functionalized with alternately bonded side groups hydroxyl (-H), methyl (-CH) and trifluoro methyl (-CF). By means of most modern theoretical and computational methods we determine the atomic geometries versus the functionalizing groups. The quasiparticle excitation effects on the electronic structure are taken into account by means of exchange-correlation treatment within the GW framework.

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2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications.

ACS Nano

November 2024

Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.

Article Synopsis
  • Ultrawide bandgap semiconductors like AlGaN and diamond improve electronic devices in harsh environments, but they struggle with issues like low thermal conductivity and limited P-type conductivity.
  • *Integrating two-dimensional materials (2DMs) such as graphene and boron nitride can overcome these challenges by providing enhanced thermal, mechanical, and electrical properties.
  • *This review discusses how incorporating 2D materials into ultrawide bandgap devices significantly boosts their performance and resilience, pointing to future research opportunities in this field.
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Enhancing the Resistive Switching Properties of Transparent HfO-Based Memristor Devices for Reliable Gasistor Applications.

Sensors (Basel)

October 2024

Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125.

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Global energy consumption is increasing yearly, yet the world is trying to move toward carbon neutrality to mitigate global warming. More research is being done on energy storage devices to advance these efforts. One well-known and widely studied technology is Zn-ion batteries (ZIBs).

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Article Synopsis
  • Silicon-based color-centers (SiCCs) are being developed as promising quantum-light sources for integration with telecom-range Silicon Photonics platforms.
  • Traditional methods for creating SiCCs face challenges in precisely controlling emitter positions due to random ion-implantation processes.
  • A new method using low-temperature epitaxial growth allows for precise positioning of SiCCs, enabling the formation of various types, including a newly identified G'-center, which shows potential for single-photon sources and improved optical properties.
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Dual-mode-based sensors have drawn a lot of interest due to their high accuracy and sensitivity compared to single-response systems. A simple electrochemical and colorimetric dual-mode sensor based on enzyme-linked immunosorbent assay (ELISA), without complex electrode surface modification, was developed for accurate and sensitive detection of carcinoembryonic antigen (CEA). The target CEA is recognized by an antibody coupled to horseradish peroxidase (HRP), which then oxidizes the substrate 3,3',5,5'-tetramethylbenzidine (TMB) to generate both a colorimetric and an electrochemical signal.

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Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.

Nanotechnology

October 2024

IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.

We investigate the nanoheteroepitaxy (NHE) of SiGe and Ge quantum dots (QDs) grown on nanotips (NTs) substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the NHE over the Stranski-Krastanow growth mechanism.

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Acoustically semitransparent nanofibrous meshes appraised by high signal-to-noise-ratio MEMS microphones.

Commun Eng

September 2024

Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany.

Microelectromechanical system-based microphones demand high ingress protection levels with regard to their use in harsh environment. Here, we develop environmental protective components comprising polyimide nanofibers combined onto polyether ether ketone fabric meshes and subsequently appraise their impact on the electroacoustic properties of high signal-to-noise-ratio microelectromechanical system-based microphones via industry-standard characterizations and theoretical simulations. Being placed directly on top of the microphone sound port, the nanofiber mesh die-cut parts with an inner diameter of 1.

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Efficiency improvement of spin-resolved ARPES experiments using Gaussian process regression.

Sci Rep

September 2024

Research Institute for Synchrotron Radiation Science, Hiroshima University, Higashi-Hiroshima, 739-0046, Japan.

Article Synopsis
  • * The researchers explore enhancing efficiency by using measurement informatics, specifically Gaussian process regression (GPR) to optimize the collection of spin polarization data.
  • * Their findings indicate that the GPR score can effectively be used as a stopping criterion, allowing for significant time savings of 5-10 times compared to traditional methods in conducting spin-resolved ARPES experiments.
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