1,020 results match your criteria: "Institute of Semiconductor[Affiliation]"
ACS Appl Electron Mater
December 2024
Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria.
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures ( = 100-350 °C) and pristine growth pressures (≲10 mbar). First, we show that a decreasing does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy.
View Article and Find Full Text PDFBiosensors (Basel)
December 2024
Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
NO is a toxic gas that can damage the lungs with prolonged exposure and contribute to health conditions, such as asthma in children. Detecting NO is therefore crucial for maintaining a healthy environment. Carbon nanotubes (CNTs) are promising materials for NO gas sensors due to their excellent electronic properties and high adsorption energy for NO molecules.
View Article and Find Full Text PDFNano Lett
December 2024
Physics Department, University of Regensburg, 93040 Regensburg, Germany.
Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity and polarization orientation as well as polarization independent current are found.
View Article and Find Full Text PDFSmall
December 2024
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-InSe offers a compelling solution to these challenges.
View Article and Find Full Text PDFAdv Mater
December 2024
State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China.
Lithium metal anode is desired by high capacity and low potential toward higher energy density than commercial graphite anode. However, the low-temperature Li metal batteries suffer from dendrite formation and dead Li resulting from uneven Li behaviors of flux with huge desolvation/diffusion barriers, thus leading to short lifespan and safety concern. Herein, differing from electrolyte engineering, a strategy of delocalizing electrons with generating rich active sites to regulate Li desolvation/diffusion behaviors are demonstrated via decorating polar chemical groups on porous metal-organic frameworks (MOFs).
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Advanced Laser Technology Laboratory of Anhui Province, Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
When creating a Schottky contact to suppress the leakage current of semiconductor γ-ray detectors and improve their energy resolution, it is successfully employed the fact that the formation of a Schottky barrier is determined not only by the difference in the electrode and semiconductor work functions but also affected by the semiconductor surface state. Oxygen plasma (OP) treatment has been used to modify the surface states of CdSe single crystals (SCs) prior to the Au electrode deposition, thereby creating a Schottky contact at the metal-semiconductor interface. The -type Schottky contact formation has been confirmed by the - characteristics and ultraviolet photoelectron spectroscopy analysis.
View Article and Find Full Text PDFNat Commun
December 2024
Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.
View Article and Find Full Text PDFSmall
December 2024
Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, P. R. China.
Nanomaterials (Basel)
November 2024
Laboratory of Molecular-Beam Epitaxy of A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.
Nanomaterials (Basel)
November 2024
Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
Chemphyschem
November 2024
Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität Linz, Altenbergerstraße 69, 4040, Linz, Austria.
The adsorption of the radical α,ɣ-bisdiphenylene-β-phenylallyl (BDPA) molecule to the Cu(100) surface was studied using scanning tunnelling microscopy (STM), scanning tunnelling spectroscopy (STS), and density functional theory (DFT) calculations accounting for dispersion forces. BDPA on Cu(100) was observed to align preferentially along directions due to weak Cu-C chemisorption between fluorenyl carbons with the underlying copper atoms. The curved shape of the BDPA molecule on Cu(100) can be ascribed to the lack of molecular orbital character on the phenyl substituent.
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2024
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia.
Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in BiTe and BiSbTeSe (BSTS) thin films was investigated. At photon energies () of 1.
View Article and Find Full Text PDFJ Microsc
November 2024
Physikalisch-Technische Bundesanstalt, Braunschweig, Germany.
Metallic nanoparticle dimers have been used to enhance the excitation rate of single-quantum emitters. The interparticle distance (d) of the dimers has a crucial influence on the signal enhancement. Therefore, precise control of d is desired for optimal performance.
View Article and Find Full Text PDFBrain Res
January 2025
Institute of Molecular Biology and Genetics, National Academy of Sciences of Ukraine, Kyiv 03143, Ukraine.
Alzheimer's disease (AD), characterized by severe and progressive cognitive decline, stands as one of the most prevalent and devastating forms of dementia. Based on our recent findings showing intermittent hypoxic conditioning improved neuronal function in patients with mild cognitive impairment, the present study aimed at investigating whether the neuroprotective effects of intermittent hypoxia can be replicated in a rat model of AD, which allows us to explore the underlying cellular mechanisms involving neuroinflammation, hypoxia inducible factor 1α (HIF1α), and cytochrome P450 family 2 subfamily E member 1 (CYP2E1). Forty-one adult male Wistar rats were randomly assigned to three groups: 1) Control group: received intracerebroventricular (ICV) injection of saline; 2) STZ group: received ICV injection of streptozotocin (STZ) to induce AD-like pathology; and 3) STZ + IHHT group received ICV injection of STZ as well as 15 daily sessions of intermittent hypoxia-hyperoxia training (IHHT).
View Article and Find Full Text PDFMicromachines (Basel)
September 2024
Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany.
The search for a synthesis method to create longer ZnO NWAs with high-quality vertical alignment, and the investigation of their electrical properties, have become increasingly important. In this study, a hydrothermal method for growing vertically aligned arrays of ZnO nanowires (NWs) using localized heating was utilized. To produce longer NWs, the temperature environment of the growth system was optimized with a novel reaction container that provided improved thermal insulation.
View Article and Find Full Text PDFSmall
October 2024
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
The integration of perovskites with mature silicon platform has emerged as a promising approach in the development of efficient on-chip light sources and high-brightness displays. However, the performance of Si-based green perovskite light-emitting diodes (PeLEDs) still falls significantly short compared to their red and near-infrared counterparts. In this study, it is revealed that the high work function Au, widely employed in Si-based top-emission PeLEDs as the reflective bottom electrode, exhibits considerably lower reflectivity in the green spectrum than in the longer wavelengths.
View Article and Find Full Text PDFSci Rep
October 2024
Department of Industrial, Electronic and Mechanical Engineering, Roma Tre University, Via della Vasca Navale 79, 00146, Rome, Italy.
We present a comprehensive study of buckled honeycomb germanene functionalized with alternately bonded side groups hydroxyl (-H), methyl (-CH) and trifluoro methyl (-CF). By means of most modern theoretical and computational methods we determine the atomic geometries versus the functionalizing groups. The quasiparticle excitation effects on the electronic structure are taken into account by means of exchange-correlation treatment within the GW framework.
View Article and Find Full Text PDFACS Nano
November 2024
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.
Sensors (Basel)
October 2024
Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125.
View Article and Find Full Text PDFGlobal energy consumption is increasing yearly, yet the world is trying to move toward carbon neutrality to mitigate global warming. More research is being done on energy storage devices to advance these efforts. One well-known and widely studied technology is Zn-ion batteries (ZIBs).
View Article and Find Full Text PDFAdv Mater
November 2024
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria.
Anal Methods
November 2024
School of Instrument Science and Optoelectronic Engineering, Beijing Information Science and Technology University, No. 12 Xiaoying Road, Beijing 100192, China.
Dual-mode-based sensors have drawn a lot of interest due to their high accuracy and sensitivity compared to single-response systems. A simple electrochemical and colorimetric dual-mode sensor based on enzyme-linked immunosorbent assay (ELISA), without complex electrode surface modification, was developed for accurate and sensitive detection of carcinoembryonic antigen (CEA). The target CEA is recognized by an antibody coupled to horseradish peroxidase (HRP), which then oxidizes the substrate 3,3',5,5'-tetramethylbenzidine (TMB) to generate both a colorimetric and an electrochemical signal.
View Article and Find Full Text PDFNanotechnology
October 2024
IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
We investigate the nanoheteroepitaxy (NHE) of SiGe and Ge quantum dots (QDs) grown on nanotips (NTs) substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the NHE over the Stranski-Krastanow growth mechanism.
View Article and Find Full Text PDFCommun Eng
September 2024
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany.
Microelectromechanical system-based microphones demand high ingress protection levels with regard to their use in harsh environment. Here, we develop environmental protective components comprising polyimide nanofibers combined onto polyether ether ketone fabric meshes and subsequently appraise their impact on the electroacoustic properties of high signal-to-noise-ratio microelectromechanical system-based microphones via industry-standard characterizations and theoretical simulations. Being placed directly on top of the microphone sound port, the nanofiber mesh die-cut parts with an inner diameter of 1.
View Article and Find Full Text PDFSci Rep
September 2024
Research Institute for Synchrotron Radiation Science, Hiroshima University, Higashi-Hiroshima, 739-0046, Japan.