A Low-Jitter Harmonic-Free All-Digital Delay-Locked Loop for Multi-Channel Vernier TDC.

This paper presents a low jitter All-Digital Delay-Locked Loop (ADDLL) with fast lock time and process immunity. A coarse locking algorithm is proposed to prevent harmonic locking with just a small increase in hardware resources. In order to effectively solve the dithering phenomenon after locking, a replica delay line and a modified binary search algorithm with two modes were introduced in our ADDLL, which can significantly reduce the peak-to-peak jitter of the replica delay line.

A Novel RFID Authentication Protocol Based on Reconfigurable RRAM PUF.

Radio frequency identification technology (RFID) has empowered a wide variety of automation industries. Aiming at the current light-weight RFID encryption scheme with limited information protection methods, combined with the physical unclonable function (PUF) composed of resistive random access memory (RRAM), a new type of high-efficiency reconfigurable strong PUF circuit structure is proposed in this paper. Experimental results show that the proposed PUF shows an almost ideal value (50%) of inter-chip hamming distance (HD) (µ/σ = 0.

Self-powered bifunctional sensor based on tribotronic planar graphene transistors.

With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin). The lower energy consumption and multiple functions are the imperative requirements to spurred scientists and mechanists to make joint efforts to meet. To achieve lower energy consumption, a promising energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated into the field effect transistors (FETs) to play the important role for sensor.

Complexity Evaluation of an Environmental Control and Life-Support System Based on Directed and Undirected Structural Entropy Methods.

During manned space missions, an environmental control and life-support system (ECLSS) is employed to meet the life-supporting requirements of astronauts. The ECLSS is a type of hierarchical system, with subsystem-component-single machines, forming a complex structure. Therefore, system-level conceptual designing and performance evaluation of the ECLSS must be conducted.

Analysis of Leakage Current of HfO/TaO-Based 3-D Vertical Resistive Random Access Memory Array.

Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D VRRAM was based on the write and read margin. However, the leakage current (LC) of the 3-D VRRAM array is a concern as well.

Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor.

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed.

Fast outlier removing method for point cloud of microscopic 3D measurement based on social circle.

Measurement outliers are easily caused by illumination, surface texture, human factors and so on during the process of microscopic topography measurement. These numerous cloud point noise will heavily affect instrument measurement accuracy and surface reconstruction quality. We propose a quick and accurate method for removing outliers based on social circle algorithm.

Simulation and Nonlinearity Optimization of a High-Pressure Sensor.

A pressure sensor in the range of 0-120 MPa with a square diaphragm was designed and fabricated, which was isolated by the oil-filled package. The nonlinearity of the device without circuit compensation is better than 0.4%, and the accuracy is 0.

A highly CMOS compatible hafnia-based ferroelectric diode.

Memory devices with high speed and high density are highly desired to address the 'memory wall' issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of HfZrO films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of HfZrO film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca2 orthorhombic phase in HfZrO film.

An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

Neuromorphic computing based on spikes offers great potential in highly efficient computing paradigms. Recently, several hardware implementations of spiking neural networks based on traditional complementary metal-oxide semiconductor technology or memristors have been developed. However, an interface (called an afferent nerve in biology) with the environment, which converts the analog signal from sensors into spikes in spiking neural networks, is yet to be demonstrated.

An RISC-V Processor with Area-Efficient Memristor-Based In-Memory Computing for Hash Algorithm in Blockchain Applications.

Blockchain technology is increasingly being used in Internet of things (IoT) devices for information security and data integrity. However, it is challenging to implement complex hash algorithms with limited resources in IoT devices owing to large energy consumption and a long processing time. This paper proposes an RISC-V processor with memristor-based in-memory computing (IMC) for blockchain technology in IoT applications.

Correction: A review of carrier thermoelectric-transport theory in organic semiconductors.

Correction for 'A review of carrier thermoelectric-transport theory in organic semiconductors' by Nianduan Lu et al., Phys. Chem.

A review of carrier thermoelectric-transport theory in organic semiconductors.

Carrier thermoelectric-transport theory has recently become of growing interest and numerous thermoelectric-transport models have been proposed for organic semiconductors, due to pressing current issues involving energy production and the environment. The purpose of this review is to provide a theoretical description of the thermoelectric Seebeck effect in organic semiconductors. Special attention is devoted to the carrier concentration, temperature, polaron effect and dipole effect dependence of the Seebeck effect and its relationship to hopping transport theory.