Nanograting p-n Junctions with Enhanced Charge Confinement.

Recently, geometry-induced quantum effects in a new quasi-1D system, or nanograting (NG) layers, were introduced and investigated. Dramatic changes in band structure and unconventional photoluminescence effects were found in silicon quantum wells with high-energy barriers. Nanograting metal-semiconductor junctions were fabricated and investigated.

Fermi-Level Tuning of G-Doped Layers.

Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping.