Zn-dopant dependent defect evolution in GaN nanowires.

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity.

Fermi level shifting, charge transfer and induced magnetic coupling at La0.7Ca0.3MnO3/LaNiO3 interface.

A large magnetic coupling has been observed at the La0.7Ca0.3MnO3/LaNiO3 (LCMO/LNO) interface.

Dislocation-induced nanoparticle decoration on a GaN nanowire.

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping.

Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts.

The luminescence of semiconductor nanostructures is strongly dependent on their size, dimensions, morphology, composition, or defects, and their band emissions can be properly and selectively tailored through the rational manipulation of these parameters during material growth. Using spatially-resolved cathodoluminescence spectroscopy, monochromatic contrast maps and high-resolution transmission electron microscopy, an obvious red-shift of the near-band-edge emission of wurtzite ZnS nanobelts, resulting from a strip of stacking faults or a zinc-blende phase with tens of atomic layers in width, has been observed and its related mechanism has been discussed. This finding is not specific to the defect-dependent optical properties tailoring of ZnS nanostructures and represents a general validity for clarifying the mechanism of peak-shift (band-gap expansion or shrinking) of a wide range of semiconductor nanostructures with various defects.

Origin of yellow-band emission in epitaxially grown GaN nanowire arrays.

Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading.

Catalyzed oxidation for nanowire growth.

A simple, low-cost and scalable route to substrate-supported nanowire growth is reported based on catalyzed oxidation. The process shares common features with popular catalyzed nanowire growth techniques such as vapor-liquid-solid (VLS), vapor-solid-solid (VSS), or vapor-quasi-solid (VQS) that use catalyst nanoparticles to direct the deposition of reactants from the vapor phase. Catalyzed oxidation for nanowire growth (CONG) utilizes catalyzed anion (e.

Solid solution, phase separation, and cathodoluminescence of GaP-ZnS nanostructures.

Quaternary solid-solution nanowires made of GaP and ZnS have been synthesized through well-designed synthetic routines. The as-synthesized GaP-ZnS solid-solution nanowires exhibit decent crystallinity with the GaP phase as the host, while a large amount of twin structural defects are observed in ZnS-rich nanowires. Cathodoluminescence studies showed that GaP-rich solid-solution nanowires have a strong visible emission centered at 600 nm and the ZnS-rich solid-solution nanowires exhibited a weak emission peak in the UV range and a broad band in the range 400-600 nm.