Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions.

Unlabelled: We present a comparative study of thermal donor (TD) center formation mechanisms as a result of carbon ion implantation into float zone (FZ-Si) and Czochralski (Cz-Si) silicon crystals. The kinetics of the TD center formation and transformation of their structure during annealing have been investigated. Also, the TD center formation takes place after additional oxygen implantation into FZ/Cz-Si, and an important role of recoil oxygen atoms (from the screen oxide) has been demonstrated for the FZ-Si case.