Pros and Cons of (NH)S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode.

The impact of wet treatment using an (NH)S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance ( < 1 × 10 Ω·cm) was achieved with samples treated with an (NH)S-isopropanol solution, whereas the highest resistivity ( = 3.

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes.

In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth morphology and non-linear I-V characteristics. Heat treatment in a N atmosphere leads to degradation of the contact microstructure, resulting in diffusion of Ga, void formation on the interface and mixing of metals.

Theoretical study of nitride short period superlattices.

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed.

Band gap engineering of In(Ga)N/GaN short period superlattices.

Discussion of band gap behavior based on first principles calculations of the electronic band structures for several InN/GaN superlattices (SLs) (free-standing and pseudomorphic) grown along different directions (polar and nonpolar) is presented. Taking into account the dependence on internal strain and lattice geometry mainly two factors influence the dependence of the band gap, E on the layer thickness: the internal electric field and the hyb wells) is more important. We also consider mIn ridization of well and barrier wave functions.