Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy.

Microsystem technology as a road from macro to nanoworld.

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations.

Optical cross talk in LED displays with light scattering optical cavities.

The influence of optical cross talk between segments in LED displays with scattering optical cavities on contrast is discussed. Numerical values of contrast are calculated for various displays with and without ambient illumination and methods of contrast improvement are considered.

Light extraction efficiency from LED displays with scattering optical cavities.

A model enabling determination of light extraction efficiency from stretched segment LED displays with scattering optical cavities is given. Calculations were performed for various cavities, and numerical results are compared with measurement results reported in available literature.

Light extraction efficiency of LED displays with perpendicular parallelepiped transparent optical cavities.

In this paper formulas are derived describing the light extraction efficiency of the transparent perpendicular parallelepiped optical cavities in LED displays. The efficiency is calculated for a mirror-wall cavity and for a cavity having walls formed by an air-epoxy interface. Results show that optical efficiencies of these cavities are almost identical and equal to approximately 13%.