4 results match your criteria: "Institute for Heterogeneous Material Systems[Affiliation]"
ACS Appl Mater Interfaces
November 2016
Soft Matter and Functional Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
In this study, dispersible mesoporous nitrogen-doped hollow carbon nanoplates have been synthesized as a new anisotropic carbon nanostructure using gibbsite nanoplates as templates. The gibbsite-silica core-shell nanoplates were first prepared before the gibbsite core was etched away. Dopamine as carbon precursor was self-polymerized on the hollow silica nanoplates surface assisted by sonification, which not only favors a homogeneous polymer coating on the nanoplates but also prevents their aggregation during the polymerization.
View Article and Find Full Text PDFare demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.
View Article and Find Full Text PDFJ Phys Condens Matter
May 2012
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Heterogeneous Material Systems, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany.
Thin films of chalcopyrite AgGaSe(2) have been successfully grown on glass and glass/molybdenum substrates using the technique of chemical close-spaced vapor transport. The high crystallinity of the samples is confirmed by grazing-incidence x-ray diffraction, scanning and transmission electron microscopy, and optical transmission/reflection spectroscopy. Here, two of the three expected direct optical bandgaps are found at 1.
View Article and Find Full Text PDFJ Phys Condens Matter
April 2012
Helmholtz-Zentrum Berlin für Materialien und Energie, Institute for Heterogeneous Material Systems, Berlin, Germany.
Polymeric derivatives of dicyandiamide were synthesized via a bulk thermal condensation method, using a range of process temperatures between 400 and 610 °C. The obtained carbon nitride powders exhibit an optical transition in the UV-green range that has been assigned to the direct bandgap of a semiconductor-like material. Within this context, the apparent bandgap is linearly tunable with increasing process temperatures, showing a temperature coefficient of - 1.
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