49 results match your criteria: "Institute for Applied Solid State Physics[Affiliation]"

Diamond is a potential host material for laser applications due to its exceptional thermal properties, ultrawide bandgap, and color centers, which promise gain across the visible spectrum. More recently, coherent laser methods offer improved sensitivity for magnetometry. However, diamond fabrication is difficult in comparison to other crystalline matrices, and many optical loss channels are not yet understood.

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The relationship between the shape of a molecule and its chemical reactivity is a central tenet in chemistry. However, the influence of the molecular geometry on reactivity can be subtle and result from several opposing effects. Here, using a crossed-molecular-beam experiment in which individual rotational quantum states of specific conformers of a molecule are separated, we study the chemi-ionization reaction of hydroquinone with metastable neon atoms.

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In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp 'fjord'-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface.

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With ultrasonic fatigue testing (UFT), it is possible to investigate the damage initiation and accumulation from the weakest link of the composite material in the very high cycle fatigue (VHCF) regime in a shorter time frame than conventional fatigue testing. However, the thermal influence on the mechanical fatigue of composites and the scatter in fatigue data for composites under ultrasonic cyclic three-point bending loading still need to be investigated. In this study, we conducted interrupted constant-amplitude fatigue experiments on a carbon-fiber satin-fabric reinforced in poly-ether-ketone-ketone (CF-PEKK) composite material.

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The use of diamond colour centres such as the nitrogen-vacancy (NV) centre is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser-threshold magnetometry and multi-pass geometries allow significantly improved sensitivity and performance via increased signals and strong light fields. Enabling material properties for these techniques and their further improvements are low optical material losses via optical absorption of signal light and low birefringence.

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Complete Characterization of Quantum Correlations by Randomized Measurements.

Phys Rev Lett

September 2023

Naturwissenschaftlich-Technische Fakultät, Universität Siegen, Walter-Flex-Str. 3, 57068 Siegen, Germany.

The fact that quantum mechanics predicts stronger correlations than classical physics is an essential cornerstone of quantum information processing. Indeed, these quantum correlations are a valuable resource for various tasks, such as quantum key distribution or quantum teleportation, but characterizing these correlations in an experimental setting is a formidable task, especially in scenarios where no shared reference frames are available. By definition, quantum correlations are reference-frame independent, i.

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Understanding diffusion in microstructures plays a crucial role in many scientific fields, including neuroscience, medicine, or energy research. While magnetic resonance (MR) methods are the gold standard for diffusion measurements, spatial encoding in MR imaging has limitations. Here, we introduce nitrogen-vacancy (NV) center-based nuclear MR (NMR) spectroscopy as a powerful tool to probe diffusion within microscopic sample volumes.

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A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed.

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A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks.

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Raman Spectroscopy and Spectral Signatures of AlScN/AlO.

Micromachines (Basel)

November 2022

Microsystems Division, Silicon Austria Labs, 9524 Villach, Austria.

III-V solid solutions are sensitive to growth conditions due to their stochastic nature. The highly crystalline thin films require a profound understanding of the material properties and reliable means of their determination. In this work, we have investigated the Raman spectral fingerprint of Al1-xScxN thin films with Sc concentrations = 0, 0.

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Microfluidic quantum sensing platform for lab-on-a-chip applications.

Lab Chip

December 2022

Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, 85748 Garching b. München, Germany.

Lab-on-a-chip (LOC) applications have emerged as invaluable physical and life sciences tools. The advantages stem from advanced system miniaturization, thus, requiring far less sample volume while allowing for complex functionality, increased reproducibility, and high throughput. However, LOC applications necessitate extensive sensor miniaturization to leverage these inherent advantages fully.

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The laser ultrasound (LU) technique has been used to determine dispersion curves for surface acoustic waves (SAW) propagating in AlScN/AlO systems. Polar and non-polar AlScN thin films were prepared by magnetron sputter epitaxy on AlO substrates and coated with a metal layer. SAW dispersion curves have been measured for various propagation directions on the surface.

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Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals.

Materials (Basel)

October 2022

European Synchrotron Radiation Facility, 71 Avenue des Martyrs, F-38043 Grenoble, France.

In this paper, we investigate, using X-ray Bragg diffraction imaging and defect selective etching, a new type of extended defect that occurs in ammonothermally grown gallium nitride (GaN) single crystals. This hexagonal "honeycomb" shaped defect is composed of bundles of parallel threading edge dislocations located in the corners of the hexagon. The observed size of the honeycomb ranges from 0.

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Beyond fifth generation (5G) communication systems aim towards data rates in the tera bits per second range, with improved and flexible coverage options, introducing many new technological challenges in the fields of network architecture, signal pro- cessing, and radio frequency front-ends. One option is to move towards cell-free, or distributed massive Multiple-Input Multiple-Output (MIMO) network architectures and highly integrated front-end solutions. This paper presents an outlook on be- yond 5G distributed massive MIMO communication systems, the signal processing, characterisation and simulation challenges, and an overview of the state of the art in millimetre wave antennas and electronics.

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AlScN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion.

Micromachines (Basel)

August 2022

Department of Material Science, Faculty of Engineering, Kiel University, Kaiserstr. 2, D-24143 Kiel, Germany.

Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.

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In this paper, a detailed investigation of the basic ammonothermal growth process of GaN is presented. By analyzing the crystallization on a native seed with a lenticular shape, thus with an intentionally varying off-cut, we wanted to answer some basic questions: (i) Which crystallographic planes play the most important role during growth (which planes are formed and which disappear)? (ii) What is the relationship between the growth rates in different crystallographic directions? (iii) What is the influence of the off-cut of the seed on the growth process? Two non-polar slices, namely, 12¯10 and 1¯100, as well as a 0001 basal plane slice of an ammonothermal crystal were analyzed. The examined planes were selectively etched in order to reveal the characteristic features of the growth process.

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In this work, the first surface acoustic-wave-based magnetic field sensor using thin-film AlScN as piezoelectric material deposited on a silicon substrate is presented. The fabrication is based on standard semiconductor technology. The acoustically active area consists of an AlScN layer that can be excited with interdigital transducers, a smoothing SiO layer, and a magnetostrictive FeCoSiB film.

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X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method.

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Ultrasonically welded hybrid aluminum/fiber-reinforced PEEK joints were analyzed non-destructively with an X-ray microscope. The potential and limitations of the technology as a non-destructive testing method were investigated. For a quantitative evaluation, joints with suitable and unsuitable parameters were compared.

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We report on the development of thermoelectrically cooled (TE-cooled) InAs/GaSb type-II superlattice (T2SL) single element infrared (IR) photodetectors and exemplify their applicability for real-time IR spectroscopy in the mid-infrared in a possible application. As the European Union's Restriction of Hazardous Substances (RoHS) threatens the usage of the state-of-the-art detector material mercury cadmium telluride (MCT), RoHS-compatible alternatives to MCT have to be established for IR detection. We use bandgap engineered InAs/GaSb T2SLs to tailor the temperature-dependent bandgap energy for detection throughout the required spectral range.

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Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.

ACS Appl Mater Interfaces

December 2020

Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.

Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers.

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The development of sensitive biosensors, such as gallium nitride (GaN)-based quantum wells, transistors, etc., often makes it necessary to functionalize GaN surfaces with small molecules or even biomolecules, such as proteins. As a first step in surface functionalization, we have investigated silane adsorption, as well as the formation of very thin silane layers.

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We demonstrate a highly efficient, single-step, cathodic exfoliation process of graphite to produce single- to few-layer graphene with a yield of over 70% from natural graphite flakes. By employing boron-doped diamond electrodes high potentials up to -60 V can be applied which was found to greatly increase the yield. The produced graphene flakes are partially hydrogenated during the electrochemical treatment likely aiding in their exfoliation.

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Multifunctional Boron-Doped Diamond Colloidal AFM Probes.

Small

November 2019

Institute of Analytical and Bioanalytical Chemistry, Ulm University, Ulm, 89081, Germany.

Scanning probe microscopy techniques providing information on conductivity, chemical fluxes, and interfacial reactivity synchronized with topographical information have gained importance within the last decades. Herein, a novel colloidal atomic force microscopy (AFM) probe is presented using a spherical boron-doped diamond (BDD) electrode attached and electrically connected to a modified silicon nitride cantilever. These conductive spherical BDD-AFM probes allow for electrochemical force spectroscopy.

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