1 results match your criteria: "Indira Gandhi Centre forAtomic Research[Affiliation]"
J Nanosci Nanotechnol
August 2010
Surface and Nanoscience Division, Indira Gandhi Centre forAtomic Research, Kalpakkam 603102, India.
We report the hardness of wurtzite InN thin film grown with different crystalline orientations of heteroepitaxial s-plane (1101) and a-plane (1120) on r-plane (1102) Al2O3, and homoepitaxial film on c-plane (0001) Al2O3. Hardness values along with elastic properties are studied using nanoindentation technique. Maximum hardness is reported for c-plane (approximately 8 GPa), which is followed by s-plane (approximately 5.
View Article and Find Full Text PDF