Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide.

Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer.

Observing 0D subwavelength-localized modes at ~100 THz protected by weak topology.

Topological photonic crystals (TPhCs) provide robust manipulation of light with built-in immunity to fabrication tolerances and disorder. Recently, it was shown that TPhCs based on weak topology with a dislocation inherit this robustness and further host topologically protected lower-dimensional localized modes. However, TPhCs with weak topology at optical frequencies have not been demonstrated so far.

Thermally Controlled Charge-Carrier Transitions in Disordered PbSbTe Chalcogenides.

Binary and ternary chalcogenides have recently attracted much attention due to their wide range of applications including phase-change memory materials, topological insulators, photonic switches, and thermoelectrics. These applications require a precise control of the number and mobility of charge carriers. Here, an unexpected charge-carrier transition in ternary compounds from the PbTe-Sb Te pseudo-binary line is reported.

Far-Infrared Near-Field Optical Imaging and Kelvin Probe Force Microscopy of Laser-Crystallized and -Amorphized Phase Change Material GeSbTe.

Chalcogenide phase change materials reversibly switch between non-volatile states with vastly different optical properties, enabling novel active nanophotonic devices. However, a fundamental understanding of their laser-switching behavior is lacking and the resulting local optical properties are unclear at the nanoscale. Here, we combine infrared scattering-type scanning near-field optical microscopy (SNOM) and Kelvin probe force microscopy (KPFM) to investigate four states of laser-switched GeSbTe (as-deposited amorphous, crystallized, reamorphized, and recrystallized) with nanometer lateral resolution.

Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures.

Lateral inhomogeneities in the formation of two-dimensional electron gases (2DEG) directly influence their electronic properties. Understanding their origin is an important factor for fundamental interpretations, as well as high quality devices. Here, we studied the local formation of the buried 2DEG at LaAlO/SrTiO (LAO/STO) interfaces grown on STO (100) single crystals with partial TiO termination, utilizing conductive atomic force microscopy (c-AFM) and scattering-type scanning near-field optical microscopy (s-SNOM).

Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications.

Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz.

Atom probe tomography.

Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-nanometre resolution. The sensitivity of APT is in the range of parts per million for all elements, including light elements such as hydrogen, carbon or lithium, enabling unique insights into the composition of performance-enhancing or lifetime-limiting microstructural features and making APT ideally suited to complement electron-based or X-ray-based microscopies and spectroscopies. Here, we provide an introductory overview of APT ranging from its inception as an evolution of field ion microscopy to the most recent developments in specimen preparation, including for nanomaterials.

Uncovering β-relaxations in amorphous phase-change materials.

Relaxation processes are decisive for many physical properties of amorphous materials. For amorphous phase-change materials (PCMs) used in nonvolatile memories, relaxation processes are, however, difficult to characterize because of the lack of bulk samples. Here, instead of bulk samples, we use powder mechanical spectroscopy for powder samples to detect the prominent excess wings-a characteristic feature of β-relaxations-in a series of amorphous PCMs at temperatures below glass transitions.

Direct atomic insight into the role of dopants in phase-change materials.

Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided quantitative information on the distribution of dopants on the atomic-scale. Here, we present atom-resolved images of Ag and In dopants in SbTe-based (AIST) PCM using electron microscopy and atom-probe tomography.

Advanced Optical Programming of Individual Meta-Atoms Beyond the Effective Medium Approach.

Nanometer-thick active metasurfaces (MSs) based on phase-change materials (PCMs) enable compact photonic components, offering adjustable functionalities for the manipulation of light, such as polarization filtering, lensing, and beam steering. Commonly, they feature multiple operation states by switching the whole PCM fully between two states of drastically different optical properties. Intermediate states of the PCM are also exploited to obtain gradual resonance shifts, which are usually uniform over the whole MS and described by effective medium response.

Role of grain boundaries in Ge-Sb-Te based chalcogenide superlattices.

Interfacial phase change memory devices based on a distinct nanoscale structure called superlattice have been shown to outperform conventional phase-change devices. This improvement has been attributed to the hetero-interfaces, which play an important role for the superior device characteristics. However, the impact of grain boundaries (GBs), usually present in large amounts in a standard sputter-deposited superlattice film, on the device performance has not yet been investigated.

Breakdown of the Stokes-Einstein relation above the melting temperature in a liquid phase-change material.

The dynamic properties of liquid phase-change materials (PCMs), such as viscosity η and the atomic self-diffusion coefficient , play an essential role in the ultrafast phase switching behavior of novel nonvolatile phase-change memory applications. To connect η to , the Stokes-Einstein relation (SER) is commonly assumed to be valid at high temperatures near or above the melting temperature and is often used for assessing liquid fragility (or crystal growth velocity) of technologically important PCMs. However, using quasi-elastic neutron scattering, we provide experimental evidence for a breakdown of the SER even at temperatures above in the high-atomic mobility state of a PCM, GeSbTe.

Beam switching and bifocal zoom lensing using active plasmonic metasurfaces.

Compact nanophotonic elements exhibiting adaptable properties are essential components for the miniaturization of powerful optical technologies such as adaptive optics and spatial light modulators. While the larger counterparts typically rely on mechanical actuation, this can be undesirable in some cases on a microscopic scale due to inherent space restrictions. Here, we present a novel design concept for highly integrated active optical components that employs a combination of resonant plasmonic metasurfaces and the phase-change material GeSbTe.

Thermoelectric Performance of IV-VI Compounds with Octahedral-Like Coordination: A Chemical-Bonding Perspective.

Thermoelectric materials provide a challenge for materials design, since they require optimization of apparently conflicting properties. The resulting complexity has favored trial-and-error approaches over the development of simple and predictive design rules. In this work, the thermoelectric performance of IV-VI chalcogenides on the tie line between GeSe and GeTe is investigated.

Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding.

Laser-assisted field evaporation is studied in a large number of compounds, including amorphous and crystalline phase change materials employing atom probe tomography. This study reveals significant differences in field evaporation between amorphous and crystalline phase change materials. High probabilities for multiple events with more than a single ion detected per laser pulse are only found for crystalline phase change materials.

Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures.

Polar dielectrics have garnered much attention as an alternative to plasmonic metals in the mid- to long-wave infrared spectral regime due to their low optical losses. As such, nanoscale resonators composed of these materials demonstrate figures of merit beyond those achievable in plasmonic equivalents. However, until now, only low-order, phonon-mediated, localized polariton resonances, known as surface phonon polaritons (SPhPs), have been observed in polar dielectric optical resonators.

Dithiocarbamate Self-Assembled Monolayers as Efficient Surface Modifiers for Low Work Function Noble Metals.

Tuning the work function of the electrode is one of the crucial steps to improve charge extraction in organic electronic devices. Here, we show that N,N-dialkyl dithiocarbamates (DTC) can be effectively employed to produce low work function noble metal electrodes. Work functions between 3.

A Switchable Mid-Infrared Plasmonic Perfect Absorber with Multispectral Thermal Imaging Capability.

A switchable perfect absorber with multispectral thermal imaging capability is presented. Aluminum nanoantenna arrays above a germanium antimony telluride (GST) spacer layer and aluminum mirror provide efficient wavelength-tunable absorption in the mid-infrared. Utilizing the amorphous-to-crystalline phase transition in GST, this device offers switchable absorption with strong reflectance contrast at resonance and large phase-change-induced spectral shifts.

Aging mechanisms in amorphous phase-change materials.

Aging is a ubiquitous phenomenon in glasses. In the case of phase-change materials, it leads to a drift in the electrical resistance, which hinders the development of ultrahigh density storage devices. Here we elucidate the aging process in amorphous GeTe, a prototypical phase-change material, by advanced numerical simulations, photothermal deflection spectroscopy and impedance spectroscopy experiments.

Influence of the local structure in phase-change materials on their dielectric permittivity.

Ge-Sb-Te alloys, which belong to the phase-change materials, are promising materials for data storage and display and data visualization applications due to their unique properties. This includes a remarkable difference of their electrical and optical properties in the amorphous and crystalline state. Pronounced change of optical properties for Ge-Sb-Te alloys is linked to the different bonding types and different atomic arrangements in amorphous and crystalline states.

Using low-loss phase-change materials for mid-infrared antenna resonance tuning.

We show tuning of the resonance frequency of aluminum nanoantennas via variation of the refractive index n of a layer of phase-change material. Three configurations have been considered, namely, with the antennas on top of, inside, and below the layer. Phase-change materials offer a huge index change upon the structural transition from the amorphous to the crystalline state, both stable at room temperature.